Crystal Growth of beta-FeSi_2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-Stabilized Zirconia Substrates

摘要

Thin films of beta phase iron disilicide (beta-FeSi_2) with 100 nm in thickness were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using evaporation and RF magnetron sputtering methods. Epitaxial beta-FeSi_2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the beta-FeSi_2 and YSZ were the same as those between beta-FeSi_2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial beta-FeSi_2 film can be grown when substrates and beta-FeSi_2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or beta-FeSi_2 surface consists of a mixture of anions and cations or iron and silicon.