Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystallographic plane of the substrate

• 1. 在图案化基材上藉由氢化物气相外延法(HVPE)形成三族氮化物结晶膜的方法 [P] . 中国专利： CN102576663B . 2014.12.10
• 2. 在图案化基材上藉由氢化物气相外延法(HVPE)形成三族氮化物结晶膜的方法 [P] . 中国专利： CN102576663A . 2012-07-11
• 3. Fabricating compound semiconductor epitaxial wafer comprises depositing silicon thin film on metal substrate, depositing compound semiconductor thin film on silicon buffer layer, and crystallizing compound semiconductor thin film [P] . 德国专利： DE102009001379A1 . 2010-09-09

  机译： 制造化合物半导体外延晶片的步骤包括：在金属基板上沉积硅薄膜;在硅缓冲层上沉积化合物半导体薄膜;以及使化合物半导体薄膜结晶化

• 4. Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness [P] . 欧洲知识产权局专利： EP0308946B1 . 1993-11-24

  机译： 化学气相沉积设备，用于获得具有均匀膜厚的高质量外延层

• 5. Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness [P] . 美国专利： US4992301A . 1991-02-12

  机译： 化学气相沉积设备，用于获得具有均匀膜厚的高质量外延层

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• 5. Scanning tunneling microscopy of homo-epitaxial chemical vapor deposited diamond(100) films. [D] . Stallcup, Richard E., II. 2000
• 6. Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100) Substrates by Radio Frequency Magnetron Sputtering [O] . Husne Ara Begum, Hiroshi Naganuma, Mikihiko Oogane, 2011
• 7. Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O 3-PbTiO3 films grown on (100)cSrRuO 3∥(100)SrTiO3 substrates by metal-organic chemical vapor deposition [O] . Yokoyama Shintaro, Okamoto Satoshi, Funakubo Hiroshi, 2006

• 1. Microstructure of Epitaxial La_(0.7)Ca_(0.3)MnO_3 Thin Films Deposited by Direct Current Magnetron Sputtering on LaAlO_3 Substrate [J] . Mingguang Wang ,Hengqiang Ye . 材料科学技术：英文版 . 2009,第3期
• 2. Carbon Nitride Films Deposited on Pt Substrates byMicrowave Plasma Chemical Vapor Deposition [J] . Yongping Zhang ,Yousong Gu ,Xiangrong Chang . 矿物冶金与材料学报：英文版 . 2000,第1期