Photoreflectance characterization and control of deffects in Gan by etching with an inductively coupled plasma

摘要

Photoreflectance (PR) is used to detect and characterize the electronic effects etch-induced defects in GaN that is exposed to an Ar or Ar/Cl inductively coupled plasma (ICP).Because of the sensitivity of PR we can follow the formation of etch-induced defects as a function of ion energies and densities.We show that at low RF powers,below 100W,the surface improves in electronic quality,but as the power is increased beyond 200W,etch-induced defects,are formed.The use of an Ar/Cl mixture plays a critical role in control of etch-induced defects.