Determination of Space Shift of Si/SiGe/Si Heterojunction's Cap Layer by Grazing-angle Incidence X-ray Backiffraction Technique

摘要

Presented theoretical paper concerns the structure investigation of Si/SiGe/Si heterojunction bipolar device by the extremely sensitive Grazing-angle Incidence X-ray Backdiffraction (GIXB) technique. The silicon cap layer and the silicon substrate have the same value of the spacing period along the growth surface according the proposed model of heterostructure. However, a longitudinal space shift exists between their lattice space periods. Appearance of the space shift is stipulated by the interface misfit dislocations. The magnitude of the space shift is one of the important characteristics of crystalline layers and substrate interface quality, and can be used for the non-destructive control of device parameters during the growth and fabrication processes.