A reactive Ti capping layer is needed to getter oxygen contamination and to make the cobalt silicidation reaction a more robust process.However,the presence of a Ti capping layer induces two other effects (in addition to the beneficial gettering of oxygen impurities):the formation temperature of CoSi_2 is increased and the CoSi_2 layer has a strong (220) preferential orientation.Because of the current technological importance of the Ti/Co/Si system,we have made a detailed investigation of the influence of several process parameters (annealing temperature,selective etching,layer thickness) on the nucleation of CoSi_2 in the Ti/Co/Si system.Moreover,it is shown that the addition of Ni (i.e.a Ti/Co/Ni/Si or Ti/Ni/Co/Si structure) causes a decrease of the CoSi_2 nucleation temperature.
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机译：需要反应性Ti覆盖层对吸收氧气污染，并使钴硅化反应成为更强大的过程。然而，Ti封端层的存在诱导另外两种效果（除了氧气杂质的有益吸气）：形成Cosi_2的温度增加，Cosi_2层具有强（220）优先定位。因为TI / CO / SI系统的当前技术重要性，我们已经详细研究了几个工艺参数的影响（退火温度，在Ti / Co / Si System中Cosi_2成核的选择性蚀刻，层厚度。结果表明，添加Ni（IEA Ti / Co / Ni / Si或Ti / Ni / Co / Si结构）的原因减少COSI_2成核温度。
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