PLASMA PROCESSING APPARATUS, CAPABLE OF CONTROLLING INFLUENCE BY THE CHANGE OF PROCESSING CONDITION ACCORDING TO THE PROGRESS OF THE PLASMA PROCESSING

摘要

PURPOSE: A plasma processing apparatus is provided to implement the run-to-run control reflecting the process state of the apparatus by adding a process model representing the state variation of the process apparatus using the control loop.;CONSTITUTION: A wafer(117) to be etched is transferred to a process chamber(100). A process monitor(102) monitors the state of the process chamber during the etching processing. A monitor value estimation unit(104) comprises a long-term variation model database(109) and a short-term variation model database(110). The monitor value estimation unit calculates the process estimation monitor value(105) using the measured monitor value(103).;COPYRIGHT KIPO 2011