Progress of radical measurements in plasmas for semiconductor processing

摘要

In semiconductor processes, reactive plasma is the most important technology for etching, deposition and surface modification of thin films. Radicals have played key roles in plasma processing. In order to realize the high performance of semiconductor processing, important molecular radicals have been measured and their behaviour has been clarified using laser spectroscopic methods such as infrared diode laser absorption spectroscopy, laser induced fluorescence spectroscopy, cavity ring down spectroscopy and recently atomic radicals have also been measured using compact vacuum ultraviolet absorption spectroscopy. Quantitative understanding of kinetics of radicals in plasma will be necessary for nano-scaled semiconductor processing. Their progress is reviewed and the future prospects are presented.