METHOD OF MANUFACTURING FOR SEMICONDUCTOR DEVICE USING EMISSION INTENSITY MEASUREMENT OF PLASMA AND PLASMA PROCESSING SYSTEM USING THE SAME

摘要

PURPOSE: A method for manufacturing a semiconductor device using an emitting intensity measurement of plasma and a plasma processing apparatus using the same are provided to be capable of obtaining the good CD(Critical Dimension) of an etch object layer regardless of the density of a pattern layer formed at the upper portion of a wafer substrate. CONSTITUTION: After sequentially forming an etch object layer(22) at the upper portion of a wafer substrate(20), a pattern layer(24) having a predetermined pattern density, arrayed at the upper portion of the etch object layer. The resultant structure is loaded in a chamber(10). The etch object layer is then etched by using the plasma generated in the chamber. At this time, the etch object layer is etched by controlling plasma etching time or RF(Radio Frequency) power according to the pattern density of the pattern layer.