Low Temperature Silicon Dioxide Thin Films Deposited Using Tetramethylsilane for Stress Control and Coverage Applications

摘要

Low temperature silicon dioxide thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetraethylsilane (TMS) as the silicon precursor at 100-200 deg C in the pressure range of 2-8 Torr.PECVD TMS oxide thin films deposited at these temperatures and pressures exhibit adjustable stress.