A molecular dynamics study of low-energy argon and boron implants on silicon (100) vicinal surfaces stepped surface

摘要

The purpose of this study is to illustrate the effects of the structure of the silicon surface on low-energy implants commonly used in current silicon technology. To this aim Molecular Dynamics simulations with classical forces are used to study implantation of argon and boron with a kinetic energy in the range from 5 eV to 30 eV into a silicon stepped surface. In addition to these calculations, the binding energy of boron atoms embedded in small clusters with a step shape have been studied with a quantum mechanical method of a semiempirical type. The purpose of these calculations is to compare the stable sites generated by the implants with the ones attained during thermal treatments under near-equilibrium conditions.