MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

摘要

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo-metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were approx 400 nm. The lowest threshold current density obtained was 6 kA cm~(-2) with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.