首页>
外国专利>
Structure and method for index-guided buried heterostructure AlGaInN laser diodes
Structure and method for index-guided buried heterostructure AlGaInN laser diodes
展开▼
机译:折射率导引的掩埋异质结构AlGaInN激光二极管的结构和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
展开▼