Polycrystalline silicon film growth in a SiF_4/SiH_4/H_2 plasma

摘要

The growth of polycrystalline silicon (polysilicon) films from SiF_4/SiH_4/H_2 gas mixtures is reported. The polysilicon films have been deposited in a multi process reactor by a PECVD process. The effect of r.f. power, chamber temperature and gas flow ratios on grain size and deposition rate have been determined. The fluorine concentration and the grain sizes of the films have been determined by SIMS and atomic force microscopy (AFM), respectively. Grain sizes in excess of 900 A are reported for layers deposited at 300 °C.