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Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass

机译:使用高速率等离子体增强化学气相沉积非晶硅在带纹理的玻璃上的先进多晶硅薄膜太阳能电池

摘要

Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with advantages of the thin-film approach. The main goals for this technology to successfully compete with others are 1) to significantly increase the cell efficiency; 2) to increase production throughout to lower the manufacturing cost. The work in this thesis is focused on reaching in two aspects: 1) enhance the optical absorption by optimizing the aluminum (Al) induced textured (AIT) glass and developing a front glass antireflective (AR) layer for thin film poly-Si solar cell, and 2) explore the plasma enhanced vapour deposition (PECVD) process parameters space to significantly increase the deposition rate of a-Si:H suitable for the fabrication of solar cell grade SPC poly-Si films. As a result of the work on optical absorption enhancement, a 9.3% efficient UNSW standard rate PECVD poly-Si thin film solar cells with a short circuit current density (Jsc) of up to 29 mA/cm2 in 4.4 cm2 cell area was demonstrated on a more advanced AIT glass superstrates than previously. A reduction of about 3% in total reflectance was achieved on poly-Si thin film diodes by applying the optimal AR process. As a response to the low PECVD deposition rate (~25 nm/min), very high deposition rates (up to 265 nm/min for 13.56 MHz and 350 nm /min for 35 MHz radio frequency) were demonstrated by using a combination of high RF power, high total flow, high pressure and substrate temperature in a PECVD reactor. An individual chamber, with a wider electrode spacing, which is separate to the standard rate process was dedicated for this high rate deposition for the absorber layers within the poly-Si thin film cells. No deteriorations were observed in aspects of both crystal quality and electrical performance of the high rate absorber cells in comparing to a reference standard rate cell. The investigations in this thesis clearly show that both AIT glass and high rate PECVD are promising for poly-Si thin film solar cell on glass technology
机译:玻璃上的固相结晶多晶硅(poly-Si)薄膜太阳能电池是一种新兴的光伏(PV)技术,将晶体硅材料的坚固性与薄膜方法的优点结合在一起。该技术成功与他人竞争的主要目标是:1)显着提高电池效率; 2)全面提高产量以降低制造成本。本文的工作主要集中在两个方面:1)通过优化铝(Al)感化(AIT)玻璃并开发用于薄膜多晶硅太阳能电池的前玻璃抗反射(AR)层来增强光吸收和2)探索等离子体增强气相沉积(PECVD)工艺参数空间,以显着提高适用于制造太阳能电池级SPC多晶硅膜的a-Si:H的沉积速率。作为光吸收增强工作的结果,在4.4 cm2的电池面积上展示了9.3%的UNSW标准比率PECVD多晶硅薄膜太阳能电池,其短路电流密度(Jsc)高达29 mA / cm2。比以前更先进的AIT玻璃覆层。通过采用最佳AR工艺,多晶硅薄膜二极管的总反射率降低了约3%。作为对低PECVD沉积速率(〜25 nm / min)的响应,通过结合使用高的沉积速率,证明了非常高的沉积速率(13.56 MHz时高达265 nm / min,35 MHz射频时高达350 nm / min) PECVD反应器中的RF功率,高总流量,高压和基板温度。具有较高电极间距的独立室与标准速率工艺分开,专门用于多晶硅薄膜单元内吸收层的高速率沉积。与参考标准速率电池相比,在高速率吸收器电池的晶体质量和电性能方面均未观察到劣化。本论文的研究清楚地表明,AIT玻璃和高速率PECVD都有望用于玻璃技术上的多晶硅薄膜太阳能电池

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