Use of electroplated copper for on-chip metallization in semiconductor devices is gaining momentum because of the low cost and high throughput of the process. Electroplated lines and trenches with sub-micron dimensions, however, are strongly affected by changes in the composition of the plating solution, thereby creating a high demand for control techniques. The most dynamic ingredients of electroplating solutions are organic additives. Even a small imbalance between the components of the additive system can cause various defects in the filling of the trenches and properties of the electroplated copper. The cycling voltammetric stripping (CVS) technique became the de facto standard technique for monitoring of electroplating solution in PWB manufacturing. This paper will describe application of CVS for monitoring of organic and inorganic components of copper electroplating solutions used in wafer processing.
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