首页> 外文会议>Quantum Electronics and Laser Science Conference >Quantum wells intermixing in InGaAsP/InGaAsP Laser Structure for Photonic Integrated Circuits
【24h】

Quantum wells intermixing in InGaAsP/InGaAsP Laser Structure for Photonic Integrated Circuits

机译:用于光子集成电路InGaASP / IngaAsp激光结构中的量子阱混合

获取原文

摘要

We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.
机译:我们通过杂质空闲诱导量子阱混合技术报告多量子阱结构的选择性区域带隙调谐。在混合量子阱样品的混合部分中制造了3DB波导定向耦合器作为光子器件应用的示范。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号