Intermixing of InGaAsP/InGaAsP quantum-well structures using dielectric films

摘要

The enhancement of quantum-well intermixing by SiO_xN_y and commercial spin-on glass dielectric films deposited on InP-based practical laser structures with all-quaternary active regions has been studied. Migration of semiconductor atoms into the dielectric films was observed using secondary ion mass spectrometry, and this migration behaviour has been correlated with the amount of band-gap change. Based on the results presented, it is suggested that the enhanced intermixing effect is due to the injection of group V interstitials into the underlying laser structure.