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Correlation of stress with photodegradation in hydrogenated amorphous silicon prepared by hot-wire CVD

机译:热线CVD制备氢化非晶硅光降解应力的相关性

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An innovative bending-beam method is used to study the stress of thin film a -Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temeprature increases from 280 to 440 deg C the hydrogen content decreases from 8 to <1 at.
机译:通过热线化学气相沉积(CVD)技术,采用创新弯曲梁法研究薄膜A -SI的应力:H沉积在薄石英上。当沉积时间从280增加到440℃时,氢含量从8到<1℃下降。

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