Power Gain Analysis of SiGe HBTs under Large-signal Power Matching Conditions

摘要

Power gain of SiGe HBTs under large-signal power matching conditions is analytically studied. It is found that, the transducer power gain for CE (common-emitter) and CB (common-base) configurations is the same at high frequencies for the same load impedance. At low frequencies, the CE configuration has much higher transducer power gain than the CB configuration. The theoretical analysis is verified with simulations using commercial device models. In addition, the influence of the load impedance on the maximum transducer power gain of CE and CB SiGe HBTs is investigated.