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Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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1.
Silicon and soft-board millimetre wave antennas for broad-band mobile wireless
机译:
用于宽带移动无线的硅和软板毫米波天线
作者:
V. F. Fusco
;
Q. Chen
;
D. Salameh
;
T. Brabetz
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2000年
2.
Microwave noise of Si/Si/sub 0.6/Ge/sub 0.4/ heterojunction bipolar transistors
机译:
SI / SI / SUB 0.6 / GE / SUB 0.4 /异质结双极晶体管的微波噪声
作者:
Mohammadi S.
;
Lu L.-H.
;
Institute of Electric and Electronic Engineer
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2000年
3.
Slotline to coplanar waveguide band-stop filter modelling
机译:
Slotline到共面波导带停止过滤器建模
作者:
V. F. Fusco
;
Q. Chen
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2000年
4.
Noise parameter modeling and SiGe profile design tradeoffs for RF applications
机译:
RF应用的噪声参数建模和SiGe剖面设计权衡
作者:
Guofu Niu
;
Shiming Zhang
;
John D. Cressler
;
Alvin J. Joseph
;
John S. Fairbanks
;
Larry E. Larson
;
Charles S. Webster
;
William E. Ansley
;
David L. Harame
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2000年
5.
BI-RME modeling of passive structures for silicon MMICs: feasibility and results
机译:
硅MMICS无源结构的双RME建模:可行性和结果
作者:
Paolo Arcioni
;
Marco Bressan
;
Giuseppe Conciauro
;
Ana Rosa Olea Garcia
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2000年
6.
Spread spectrum communication system performance optimization based on collector epilayer engineering
机译:
基于收集器epilayer工程的扩频通信系统性能优化
作者:
Reza Mahmoudi
;
J.L. Tauritz
;
J. N. Burghartz
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2000年
7.
The Design and operation of terahertz Sources based on silicon germanium alloys
机译:
基于硅锗合金的太赫兹来源的设计与运行
作者:
J. Kolodzey
;
T. N. Adam
;
R. T. Troeger
;
P. -C. Lv
;
S. K. Ray
;
G. Looney
;
A. Rosen
;
M. S. Kagan
;
Irina N. Yassievich
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2003年
关键词:
Terahertz;
Intersubband devices;
Silicon germanium;
Quantum wells;
Impurity transitions;
8.
RF-MEMS filters manufactured on silicon: key facts about bulk-acoustic-wave technology
机译:
RF-MEMS在硅制造的过滤器:关于散装声波技术的关键事实
作者:
Robert Aigner
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2003年
关键词:
Bulk-acoustic-wave (BAW) filter;
RF-MEMS;
Solidly-mounted resonator (SMR);
9.
Achieving frequency-agile radio
机译:
实现频率敏捷无线电
作者:
Mukhopadhyay R.
;
Park Y.
;
Lee J.S.
;
Nuttinck S.
;
Cressler J.D.
;
Laskar J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
voltage-controlled oscillators;
frequency agility;
circuit tuning;
resistors;
inductors;
BiCMOS integrated circuits;
mobile radio;
frequency-agile radio;
high bandwidth systems;
bottom-up approach;
tunability;
tunable active resistor;
VCO;
SiGe BiCMOS process;
tuning range;
tunable active inductor;
0.18 micron;
Ge-Si;
10.
RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects
机译:
由于热载体和软击穿效应,PMOS晶体管中的RF性能下降
作者:
Yi Liu
;
Sadat A.
;
Chuanzhao Yu
;
Yuan J.S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
hot carriers;
semiconductor device breakdown;
MOSFET;
S-parameters;
carrier mobility;
microwave transistors;
RF performance degradation;
pMOS transistors;
hot carrier stress;
soft breakdown stress;
cut-off frequency;
S-parameters;
threshold voltage;
mobility;
0 to 10 GHz;
11.
Achieving frequency-agile radio
机译:
实现频率敏捷无线电
作者:
Mukhopadhyay R.
;
Park Y.
;
Lee J.S.
;
Nuttinck S.
;
Cressler J.D.
;
Laskar J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
voltage-controlled oscillators;
frequency agility;
circuit tuning;
resistors;
inductors;
BiCMOS integrated circuits;
mobile radio;
frequency-agile radio;
high bandwidth systems;
bottom-up approach;
tunability;
tunable active resistor;
VCO;
SiGe BiCMOS process;
tuning range;
tunable active inductor;
0.18 micron;
Ge-Si;
12.
RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects
机译:
由于热载体和软击穿效应,PMOS晶体管中的RF性能下降
作者:
Yi Liu
;
Sadat A.
;
Chuanzhao Yu
;
Yuan J.S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
hot carriers;
semiconductor device breakdown;
MOSFET;
S-parameters;
carrier mobility;
microwave transistors;
RF performance degradation;
pMOS transistors;
hot carrier stress;
soft breakdown stress;
cut-off frequency;
S-parameters;
threshold voltage;
mobility;
0 to 10 GHz;
13.
Analysis and circuit modeling of on-chip transformers
机译:
片上变压器的分析与电路建模
作者:
Klemens G.
;
Bhagat M.
;
Jessie D.
;
Fredenick N.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
circuit simulation;
network analysis;
integrated circuit modelling;
transformers;
inductors;
network topology;
cellular radio;
S-parameters;
S-matrix theory;
lumped parameter networks;
equivalent circuits;
on-chip transformers;
circuit analysis;
circuit topologies;
cellular systems;
PCS;
S-parameter matrix;
electromagnetic simulation;
equivalent lumped-element circuit model;
fitting error;
EM simulation;
equivalent circuit models;
on-chip inductors;
14.
Wafer-level chip-scale packaging for low-end RF products
机译:
低端RF产品的晶圆级芯片级包装
作者:
Bartek M.
;
Zilber G.
;
Teomin D.
;
Polyakov A.
;
Sinaga S.
;
Mendes P.M.
;
Burghartz J.N.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
chip scale packaging;
radiofrequency integrated circuits;
substrates;
crosstalk;
interference suppression;
inductors;
antennas;
wafer-level chip-scale packaging;
low-end RF products;
RF IC packaging;
RFIC packaging;
substrate crosstalk suppression;
substrate thinning;
substrate trenching;
RF passives;
inductors;
antennas;
Shellcase packaging;
15.
A wide tuning range CMOS VCO using variable inductor
机译:
使用可变电感的宽调谐范围CMOS VCO
作者:
Yoshihara Y.
;
Sugawara H.
;
Ito H.
;
Okada K.
;
Masu K.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
voltage-controlled oscillators;
circuit tuning;
CMOS analogue integrated circuits;
UHF integrated circuits;
UHF oscillators;
inductors;
integrated circuit design;
CMOS VCO;
on-chip variable inductor;
wide tuning range VCO;
phase noise;
2.13 to 3.28 GHz;
16.
Design and optimization of silicon-based patch antennas using time-domain techniques
机译:
基于时域技术的基于硅的贴片天线的设计与优化
作者:
DeJean G.
;
Bushyager N.
;
Dalton E.
;
Tentzeris M.M.
;
Papapolymerou J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
finite difference time-domain analysis;
optimisation;
microstrip antennas;
electromagnetic fields;
permittivity;
silicon;
optimization;
silicon-based patch antennas;
time-domain techniques;
microstrip patch antenna;
low permittivity material;
silicon substrate;
simulations;
multi-resolution time domain method;
MRTD method;
finite difference time domain method;
FDTD methods;
electromagnetic fields;
17.
Distributed amplifier design for low noise applications
机译:
用于低噪声应用的分布式放大器设计
作者:
Mishra C.
;
Chunyu Xin
;
Sanchez-Sinencio E.S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
random noise;
integrated circuit noise;
distributed amplifiers;
wideband amplifiers;
high-frequency transmission lines;
CMOS analogue integrated circuits;
microwave amplifiers;
millimetre wave amplifiers;
integrated circuit design;
microwave integrated circuits;
millimetre wave integrated circuits;
distributed amplifier design;
low-noise amplifier;
front-end block;
transmission lines;
gain;
noise figure;
CMOS process;
wideband amplifiers;
0.18 micron;
10 to 66 GHz;
18.
MM-wave transceivers using SiGe HBT technology
机译:
使用SiGe HBT技术的MM波收发器
作者:
Gaucher B.
;
Beukema T.
;
Reynolds S.
;
Floyd B.
;
Zwick T.
;
Pfeiffer U.
;
Liu D.
;
Cressler J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
millimetre wave bipolar transistors;
heterojunction bipolar transistors;
transceivers;
wireless LAN;
personal area networks;
IEEE standards;
power consumption;
MM-wave transceivers;
SiGe;
HBT technology;
high-speed wireless;
wireless local area network;
WLAN;
wireless personal-area network;
WPAN;
IEEE standards;
FCC restrictions;
maximum radiated power;
power spectral density;
bandwidth limitations;
ISM bands;
power consumption;
portable devices;
60 GHz;
Ge-Si;
19.
Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
机译:
用于10 GB / S光通信系统的高电阻率硅行进波浪放大器的设计与表征
作者:
De Paola F.M.
;
de Vreede L.C.N.
;
Nanver L.K.
;
Rinaldi N.
;
Burghartz J.N.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon;
travelling wave amplifiers;
optical communication equipment;
bipolar integrated circuits;
argon;
network topology;
microwave transistors;
microwave amplifiers;
driver circuits;
high-resistivity silicon traveling wave amplifier;
optical communication systems;
bipolar traveling wave amplifier;
argon-enhanced DIMES03 process;
emitter-follower-cascode topology;
driver operation;
microwave transistor;
10 Gbit/s;
15 GHz;
13 GHz;
20.
SiGe BiCMOS LNA meeting FCC Part 15 ultra-wideband restrictions
机译:
SiGe BICMOS LNA符合FCC第15部分超宽带限制
作者:
Llano Y.J.
;
Guardado A.H.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
BiCMOS analogue integrated circuits;
microwave amplifiers;
millimetre wave amplifiers;
ultra wideband communication;
microwave integrated circuits;
millimetre wave integrated circuits;
integrated circuit design;
BiCMOS low noise amplifier;
ultra-wideband restrictions;
silicon-germanium alloy;
FCC Part 15 restrictions;
UWB technology;
cut-off frequency;
gain;
return loss;
matching network;
UWB communication;
LNA design;
0.4 micron;
46 GHz;
3 to 10.5 GHz;
24 dB;
21.
Monolithically integrated IMPATT diodes for Ka-band transmitters
机译:
用于KA波段发射器的单片集成的灭活二极管
作者:
Schollhorn C.J.
;
Xu H.
;
Morschbach M.
;
Kasper E.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
IMPATT diodes;
radio transmitters;
microwave antennas;
slot antennas;
silicon;
coplanar waveguides;
resonators;
S-parameters;
radar antennas;
Ka-band transmitters;
S-parameter measurements;
high-frequency radar systems;
monolithically integrated IMPATT diodes;
coplanar waveguide resonator;
planar slot antenna;
performance;
silicon substrate;
200 micron;
22.
Efficient design methodology of polymer based RF MEMS switches
机译:
基于聚合物的RF MEMS开关的高效设计方法
作者:
Ducarouge B.
;
Dubuc D.
;
Melle S.
;
Bary L.
;
Pons P.
;
Plana R.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
microswitches;
optimisation;
network topology;
circuit optimisation;
electromigration;
network synthesis;
microwave switches;
polymers;
RF MEMS switches;
polymer based MEMS switches;
design methodology;
capacitive shunt switch topology;
pull down voltage;
passive circuits;
scalable equivalent electrical model;
electromagnetic simulations;
microwave performance optimization;
electromigration effect;
24 GHz;
22 V;
23.
Substrate coupling noise issues in silicon technology
机译:
硅技术衬底耦合噪声问题
作者:
Jenkins K.A.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
crosstalk;
silicon;
substrates;
semiconductor device noise;
substrate coupling noise;
silicon integrated circuits;
substrate crosstalk;
24.
GPS low noise amplifier with high immunity to wireless jamming signals
机译:
GPS低噪声放大器具有高免疫的无线干扰信号
作者:
Gruson F.
;
Schulz H.
;
Golberg H.-J.
;
Schumacher H.
;
Durler M.
;
Spiegel S.J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Global Positioning System;
UHF amplifiers;
jamming;
interference suppression;
power control;
Ge-Si alloys;
power consumption;
bipolar transistor circuits;
intermodulation distortion;
GPS;
low noise amplifier;
intermodulation distortion;
bipolar transistor circuits;
wireless jamming signal immunity;
SiGe;
power control;
Atmel ATR0610;
LNA;
power saving;
radio interface;
out-of-band linearity requirements;
performance;
2 dB;
1.8 to 2 GHz;
3 mA;
5 ms;
Ge-Si;
25.
A direct method to extract the substrate resistance components of RF MOSFETs valid up to 50 GHz
机译:
提取RF MOSFET的衬底电阻分量的直接方法最多可获得50 GHz
作者:
Seyoung Kim
;
Jeonghu Han
;
Hyungcheol Shin
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
electric resistance;
substrates;
MOSFET;
microwave field effect transistors;
equivalent circuits;
semiconductor device models;
substrate resistance components;
RF MOSFET;
output characteristics;
equivalent circuit;
0 to 50 GHz;
26.
Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors
机译:
最先进的CMOS和SIGE RF晶体管的速度和功率性能比较
作者:
Jagannathan B.
;
Greenberg D.
;
Sanderson D.I.
;
Rieh J.-S.
;
Pekarik J.
;
Plouchart J.O.
;
Freeman G.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
field effect transistors;
heterojunction bipolar transistors;
CMOS integrated circuits;
radiofrequency integrated circuits;
Ge-Si alloys;
silicon;
characteristics measurement;
BiCMOS integrated circuits;
bipolar integrated circuits;
state-of-the-art RF transistors;
silicon-germanium transistors;
DC characteristics measurements;
RF characteristics measurements;
silicon nFET;
silicon-germanium HBT;
CMOS technology;
BiCMOS technology;
90 nm;
130 nm;
Si;
SiGe;
27.
CMOS LNA design for system-on-chip receiver stages
机译:
CMOS LNA设计用于片内接收器级
作者:
Telli A.
;
Askar M.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
CMOS analogue integrated circuits;
UHF amplifiers;
system-on-chip;
radio receivers;
circuit CAD;
integrated circuit design;
cellular radio;
satellite communication;
UHF integrated circuits;
CMOS LNA design;
system-on-chip receiver stages;
narrowband low noise amplifiers;
single-ended low noise amplifiers;
inductive source low noise amplifiers;
degenerated low noise amplifiers;
L-biased DC-bias circuit;
GSM;
S-band;
low earth orbit;
900 MHz;
2025 MHz;
2210 MHz;
0.7 micron;
28.
High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology
机译:
高频电容微机械谐振器,采用HARPS技术的动态阻力降低
作者:
Pourkamali S.
;
Ayazi F.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
micromechanical resonators;
silicon;
silicon-on-insulator;
VHF devices;
substrates;
radiofrequency integrated circuits;
Q-factor;
high frequency capacitive micromechanical resonators;
motional resistance;
high aspect-ratio combined poly and single-crystal silicon technology;
MEMS technology;
VHF capacitive disk resonators;
thick bulk mode capacitive disk resonators;
side-supported disk resonators;
capacitive gaps;
gap aspect-ratio;
silicon-on-insulator substrates;
signal-to-noise ratio;
quality factor;
resonant frequencies;
thick disk resonators;
18 micron;
10 micron;
160 nm;
75 nm;
150 to 230 MHz;
Si;
29.
Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology
机译:
Si / SiGe HBT BICMOS技术的机械平面双轴应变效应
作者:
Nayeem M.B.
;
Haugerud B.M.
;
Krithivasan R.
;
Yuan Lu
;
Chendong Zhu
;
Belford R.E.
;
Cressler J.D.
;
Joseph A.J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
BiCMOS integrated circuits;
tensile testing;
heterojunction bipolar transistors;
carrier mobility;
field effect transistor circuits;
mechanical planar biaxial tensile strain;
Si/SiGe HBT;
epitaxial-base Si BJT control;
saturation current;
effective mobility;
nFET;
decreased collector current;
current gain;
BiCMOS technology;
Ge-Si;
30.
A novel design of an asymmetric D-latch
机译:
一种非对称D闩锁的新颖设计
作者:
Trotta S.
;
Sundermeyer J.
;
Weber N.
;
Saurer J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
flip-flops;
current-mode circuits;
network topology;
integrated circuit design;
high speed D-latch;
high speed asymmetric D-latch;
asymmetric input clock signal;
completely asymmetric D-flipflop;
static behavior;
superdynamic behavior;
current mode latches;
network topology;
pseudo random bit sequence generator IC;
31.
In search of a Si/SiGe THz quantum cascade laser
机译:
寻找SI / SIGE THZ量子级联激光器
作者:
Paul D.J.
;
Townsend P.
;
Lynch S.A.
;
Kelsall R.W.
;
Ikonic Z.
;
Harrison P.
;
Norris D.J.
;
Liew S.L.
;
Cullis A.G.
;
Li X.
;
Jing Zhang
;
Bain N.
;
Gamble H.S.
;
Tribe W.R.
;
Arnone D.D.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon;
Ge-Si alloys;
quantum cascade lasers;
gallium arsenide;
electroluminescence;
light polarisation;
ridge waveguides;
quantum cascade laser;
electroluminescence;
quantum cascade emitters;
optical mode confinement;
silicon-on-silicide technology;
quantum cascade interwell emission;
waveguide losses;
ridge waveguides;
terahertz frequencies;
Si-SiGe;
GaAs;
32.
Compact Doppler sensor operating at 31-32 GHz using a SiGe HBT MMIC and patch antennas
机译:
紧凑型多普勒传感器在31-32 GHz下使用SiGe HBT MMIC和Patch Antennas运行
作者:
Abele R.
;
Trasser A.
;
Schad K.-B.
;
Sonmez E.
;
Schumacher H.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
MMIC mixers;
microstrip antennas;
Doppler radar;
millimetre wave detectors;
transmitting antennas;
receiving antennas;
millimetre wave antennas;
bipolar integrated circuits;
millimetre wave bipolar transistors;
heterojunction bipolar transistors;
millimetre wave oscillators;
lumped parameter networks;
laminates;
substrates;
flip-chip devices;
compact Doppler sensor;
SiGe MMIC;
patch antennas;
transmitting antennas;
receiving antennas;
HBT MMIC;
differential oscillator;
balanced Gilbert cell mixer;
lumped elements;
flip-chip mounting;
interconnect losses;
microwave laminate substrate TMM3;
31 to 32 GHz;
Ge-Si;
33.
Design of RF filters using silicon integrated passive components
机译:
使用硅集成无源组件设计RF滤波器
作者:
Kamgaing T.
;
Henderson R.
;
Petras M.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
inductors;
silicon;
Ge-Si alloys;
capacitors;
band-pass filters;
low-pass filters;
UHF filters;
microwave filters;
integrated circuit design;
passive filters;
BiCMOS analogue integrated circuits;
UHF integrated circuits;
microwave integrated circuits;
MIM devices;
transformers;
RF filter design;
silicon integrated passive components;
silicon-germanium BiCMOS process;
bandpass filters;
silicon substrate;
monolithic transformers;
inductors;
lowpass filter;
harmonic filter;
quality factor;
high Q inductors;
metal-insulator-metal capacitors;
MIM capacitors;
1.7 to 10 GHz;
0.4 micron;
Si;
SiGe;
34.
A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator
机译:
SiGe HBT 24 GHz子谐波直接转换IQ-解调器
作者:
Lindberg P.
;
Ojefors E.
;
Sonmez E.
;
Rydberg A.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
demodulators;
Ge-Si alloys;
radio receivers;
bipolar MMIC;
integrated circuit design;
silicon-germanium HBT;
subharmonic direct-conversion IQ-demodulator;
direct conversion receiver;
substrate;
conversion gain;
LO/RF isolation;
compression point;
24 GHz;
20 ohmcm;
11 dB;
101 mA;
3 V;
SiGe;
35.
A 1.575 GHz BiCMOS GPS low noise amplifier for low power application
机译:
1.575 GHz BICMOS GPS低功率应用的低噪声放大器
作者:
Agarwal A.
;
Chandel G.S.
;
Biswas A.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
BiCMOS analogue integrated circuits;
Global Positioning System;
UHF amplifiers;
integrated circuit design;
integrated circuit noise;
semiconductor device noise;
random noise;
amplification;
BiCMOS low noise amplifier;
GPS low noise amplifier;
integrated circuit representation;
single stage architecture;
tank circuit;
gain optimization;
noise performance optimization;
power consumption;
third order intercept;
circuit design;
1.575 GHz;
3.3 V;
4 mA;
1.5 dB;
36.
Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique
机译:
使用新的四端口自校准提取技术,准确的交流晶体管表征到110GHz
作者:
Qingqing Liang
;
Wei-Min Kuo
;
Cressler J.
;
Niu G.
;
Joseph A.J.
;
Harame D.L.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
characteristics measurement;
S-parameters;
heterojunction bipolar transistors;
microwave transistors;
millimetre wave transistors;
UHF transistors;
semiconductor device testing;
AC transistor characterization;
four-port self-calibrated extraction technique;
parasitics-deembedding methodologies;
S-parameter measurements;
silicon-germanium HBT;
MM-wave transistor characterization;
distributive effects;
2 to 110 GHz;
37.
Measurement and 3D simulations of substrate noise isolation and resistance for mixed signal applications
机译:
基板噪声隔离和混合信号应用的电阻测量和3D模拟
作者:
Rajendran K.
;
Johnson J.B.
;
Furkay S.
;
Kumar M.
;
Fischer S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
substrates;
electric noise measurement;
mixed analogue-digital integrated circuits;
circuit simulation;
electric resistance measurement;
integrated circuit layout;
isolation technology;
circuit optimisation;
3D simulations;
substrate noise isolation;
resistance measurement;
mixed signal applications;
3D process modeling;
mixed element meshes;
tetrahedralization;
small signal device simulation;
Fielday;
substrate noise coupling;
layout guidelines;
isolation parameter analysis;
signal isolation optimization;
38.
Boosting up performance of power SiGe HBTs using advanced layout concept
机译:
使用高级布局概念提高电源SiGe HBT的性能
作者:
Guogong Wang
;
Chao Qin
;
Ningyue Jiang
;
Zhenqiang Ma
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
power bipolar transistors;
heat transfer;
thermal resistance;
power silicon-germanium HBT;
power HBT;
power transistors;
advanced power device layout structure;
heat transfer counterbalanced layout;
thermal effects;
ballasting resistors;
thermal resistance matrix;
SiGe;
39.
High-Q integrated passive elements for high frequency applications
机译:
高Q集成的高频应用无源元件
作者:
Peroulis D.
;
Mohammadi S.
;
Katehi L.P.B.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
micromechanical devices;
Q-factor;
varactors;
thin film inductors;
transformers;
circuit resonance;
circuit tuning;
high-Q integrated passive elements;
MEMS fabrication technology;
very high frequency varactors;
high resistivity silicon substrate;
broadband analog varactors;
varactor tuning range;
inductors;
high efficiency transformers;
transformer coupling factor;
transformer self-resonance frequency;
post-processing step;
vertical chip/interposer packaging;
3 to 7 GHz;
8 to 16 GHz;
Si;
40.
A 47 GHz monolithically integrated SiGe push-push oscillator
机译:
A 47 GHz单整体集成SiGe推送振荡器
作者:
Wanner R.
;
Pfost M.
;
Lachner R.
;
Olbrich G.R.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
millimetre wave oscillators;
bipolar MIMIC;
Ge-Si alloys;
semiconductor materials;
thin film inductors;
integrated circuit modelling;
phase noise;
monolithically integrated oscillator;
push-push oscillator;
bipolar oscillator;
planar inductors;
3D EM field solver;
single sideband phase noise;
47 GHz;
23.5 GHz;
SiGe:C;
41.
Development of scalable models for patterned-ground-shield inductors in SiGe BiCMOS technology
机译:
SiGE BICMOS技术中图案地面屏蔽电感器可扩展模型的开发
作者:
Svitek R.
;
Klein A.S.
;
Clifford M.
;
Raman S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
inductors;
earthing;
electromagnetic shielding;
Q-factor;
lumped parameter networks;
BiCMOS integrated circuits;
radiofrequency integrated circuits;
patterned-ground-shield inductors;
monolithic spiral inductors;
center-grounded ground shield;
perimeter-grounded ground shield;
polysilicon conductor levels;
metal-one conductor levels;
on-wafer measurement;
pad parasitics de-embedding;
inductor quality factor;
scalable lumped-element model;
model extraction;
SiGe:C;
RFBiCMOS process;
0.18 micron;
Ge-Si:C;
42.
Design and optimization of silicon-based patch antennas using time-domain techniques
机译:
基于时域技术的基于硅的贴片天线的设计与优化
作者:
DeJean G.
;
Bushyager N.
;
Dalton E.
;
Tentzeris M.M.
;
Papapolymerou J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
finite difference time-domain analysis;
optimisation;
microstrip antennas;
electromagnetic fields;
permittivity;
silicon;
optimization;
silicon-based patch antennas;
time-domain techniques;
microstrip patch antenna;
low permittivity material;
silicon substrate;
simulations;
multi-resolution time domain method;
MRTD method;
finite difference time domain method;
FDTD methods;
electromagnetic fields;
43.
Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS
机译:
50 nm门长度CMOS中的微观RF噪声仿真和噪声源模拟
作者:
Guofu Niu
;
Yan Cui
;
Taylor S.S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
semiconductor device noise;
random noise;
CMOS integrated circuits;
radiofrequency integrated circuits;
semiconductor device models;
microscopic RF noise simulation;
noise source modeling;
CMOS;
hydrodynamic noise simulation;
intrinsic noise sources;
Y-representation model;
H-representation model;
50 nm;
44.
On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes
机译:
商用SiGe HBT BICMOS过程中传输线的设计与实现
作者:
Morton M.
;
Andrews J.
;
Lee J.
;
Papapolymerou J.
;
Cressler J.D.
;
Cho D.
;
Hong K.
;
Shin H.
;
Park K.
;
Yi S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MIMIC;
Ge-Si alloys;
semiconductor materials;
heterojunction bipolar transistors;
BiCMOS integrated circuits;
microstrip lines;
integrated circuit measurement;
integrated circuit modelling;
HBT BiCMOS processes;
thin film microstrip transmission lines;
top/bottom metalization layers;
full wave EM simulation;
slotted ground plane design rules;
110 GHz;
3.24 micron;
SiGe;
45.
Measurement and 3D simulations of substrate noise isolation and resistance for mixed signal applications
机译:
基板噪声隔离和混合信号应用的电阻测量和3D模拟
作者:
Rajendran K.
;
Johnson J.B.
;
Furkay S.
;
Kumar M.
;
Fischer S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
substrates;
electric noise measurement;
mixed analogue-digital integrated circuits;
circuit simulation;
electric resistance measurement;
integrated circuit layout;
isolation technology;
circuit optimisation;
3D simulations;
substrate noise isolation;
resistance measurement;
mixed signal applications;
3D process modeling;
mixed element meshes;
tetrahedralization;
small signal device simulation;
Fielday;
substrate noise coupling;
layout guidelines;
isolation parameter analysis;
signal isolation optimization;
46.
Design of a monolithic 30 GHz branch line coupler in SiGe HBT technology using 3D EM simulation
机译:
3D EM仿真设计SiGe HBT技术的单片30 GHz分支线路耦合器
作者:
Jongsoo Lee
;
Tretiakov Y.V.
;
Cressler J.D.
;
Joseph A.J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
circuit simulation;
heterojunction bipolar transistors;
silicon;
bipolar MMIC;
microstrip couplers;
circuit optimisation;
thin film circuits;
computational electromagnetics;
monolithic branch line coupler;
silicon-germanium HBT technology;
3D EM simulation;
design optimization;
thin film microstrip lines;
BiCMOS technology;
ground plane connections;
reflection coefficient;
30 GHz;
47.
Dynamic characterization and model comparison of high frequency FET devices
机译:
高频FET器件的动态特征与模型比较
作者:
Dawande M.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
circuit simulation;
field effect transistor circuits;
semiconductor device models;
precision dynamic characterization;
model comparison;
high frequency FET devices;
fast pulses;
large signal models;
binning models;
ADS simulation tool;
Statz model;
TOM model;
Angelov model;
48.
Modeling of distortion in bipolar transistors - a review
机译:
双极晶体管畸变建模 - 评论
作者:
Schroter M.
;
Sakalas P.
;
Tran H.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
distortion;
semiconductor device models;
bipolar transistors;
HF distortion modeling;
bipolar transistors;
theoretical investigations;
silicon-germanium technologies;
1D device simulation;
SiGe;
49.
Distributed amplifier design for low noise applications
机译:
用于低噪声应用的分布式放大器设计
作者:
Mishra C.
;
Chunyu Xin
;
Sanchez-Sinencio E.S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
random noise;
integrated circuit noise;
distributed amplifiers;
wideband amplifiers;
high-frequency transmission lines;
CMOS analogue integrated circuits;
microwave amplifiers;
millimetre wave amplifiers;
integrated circuit design;
microwave integrated circuits;
millimetre wave integrated circuits;
distributed amplifier design;
low-noise amplifier;
front-end block;
transmission lines;
gain;
noise figure;
CMOS process;
wideband amplifiers;
0.18 micron;
10 to 66 GHz;
50.
A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies
机译:
一种可制造的高k MIM电介质,具有用于RF和混合信号技术的优异可靠性和电压线性
作者:
Vaed K.
;
Eshun E.
;
Bolam R.
;
Stein K.
;
Coolbaugh D.
;
Ahlgren D.
;
Dunn J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
dielectric materials;
dielectric thin films;
electric breakdown;
leakage currents;
integrated circuit reliability;
MIM devices;
thin film capacitors;
radiofrequency integrated circuits;
mixed analogue-digital integrated circuits;
optimisation;
dielectric breakdown;
leakage current;
dielectric reliability;
manufacturable high-k MIM dielectric;
dielectric voltage linearity;
RFIC;
mixed-signal IC;
dielectric optimization;
BEOL compatibility;
dielectric film scaling;
bias linearity;
capacitance density;
MIM capacitors;
TDDB;
51.
A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process
机译:
具有使用SiGe HBT过程的输入/输出有源平衡器的1-6 GHz整体上转换混合器
作者:
Sang-Heung Lee
;
Hyun-Chul Bae
;
Seung-Yun Lee
;
Jongdae Kim
;
Bo Woo Kim
;
Jin-Yeong Kang
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MMIC mixers;
baluns;
heterojunction bipolar transistors;
bipolar MMIC;
Ge-Si alloys;
semiconductor materials;
MMIC up-conversion mixer;
input/output active baluns;
HBT process;
RF transmitter;
LO/RF wideband matching circuits;
LO/IF input balun circuit;
RF output balun circuit;
power conversion gain;
LO/IF isolation;
LO/RF isolation;
1 to 6 GHz;
0.8 micron;
4.5 GHz;
29 mA;
3.0 V;
2.7 mm;
1.6 mm;
SiGe;
52.
A novel low power low voltage LNA and mixer for WLAN IEEE 802.11a standard
机译:
用于WLAN IEEE 802.11a标准的新型低功率低压LNA和混合器
作者:
Xuezhen Wang
;
Weber R.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MMIC amplifiers;
MMIC mixers;
CMOS analogue integrated circuits;
current mirrors;
radio equipment;
integrated circuit design;
low noise amplifier;
low power low voltage LNA;
low power low voltage mixer;
IEEE 802.11a WLAN;
down-conversion mixer;
CMOS process;
cascode inductive source degeneration structure;
Gilbert cell;
current mirror;
current source transistor;
front-end circuit;
single-sideband noise figure;
return loss;
third-order input intercept point;
conversion gain;
circuit design;
5.8 GHz;
0.18 micron;
5.6 GHz;
1.5 V;
17.2 mW;
7.8 dB;
8 dB;
14.5 dB;
15.7 dB;
53.
Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
机译:
用于10 GB / S光通信系统的高电阻率硅行进波浪放大器的设计与表征
作者:
De Paola F.M.
;
de Vreede L.C.N.
;
Nanver L.K.
;
Rinaldi N.
;
Burghartz J.N.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon;
travelling wave amplifiers;
optical communication equipment;
bipolar integrated circuits;
argon;
network topology;
microwave transistors;
microwave amplifiers;
driver circuits;
high-resistivity silicon traveling wave amplifier;
optical communication systems;
bipolar traveling wave amplifier;
argon-enhanced DIMES03 process;
emitter-follower-cascode topology;
driver operation;
microwave transistor;
10 Gbit/s;
15 GHz;
13 GHz;
54.
A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs
机译:
Si CMOS,SiGe BICMOS和INP HBT技术对高速和毫米波IC的比较
作者:
Voinigescu S.P.
;
Dickson T.O.
;
Beerkens R.
;
Khalid I.
;
Westergaard P.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
high-speed integrated circuits;
millimetre wave integrated circuits;
CMOS integrated circuits;
BiCMOS integrated circuits;
silicon;
Ge-Si alloys;
indium compounds;
bipolar integrated circuits;
silicon CMOS technology;
silicon-germanium BiCMOS technology;
indium phosphide HBT technology;
high-speed IC;
millimeter-wave IC;
silicon MOSFET devices;
silicon-germanium HBT devices;
CMOS high-speed circuit;
30 to 80 Gbit/s;
130 nm;
Si;
SiGe;
InP;
55.
Modeling of power supply parasitics for selecting on-wafer bypass capacitance in high-speed IC designs
机译:
高速IC设计中晶圆旁路电容选择电源寄生诱导的建模
作者:
Qiurong He
;
Milton Feng
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
integrated circuit design;
high-speed integrated circuits;
minimisation;
indium compounds;
gallium arsenide;
gallium compounds;
heterojunction bipolar transistors;
amplifiers;
integrated circuit modelling;
capacitors;
bipolar integrated circuits;
power supply parasitics modeling;
on-wafer bypass capacitance;
high-speed IC designs;
indium gallium phosphide;
gallium arsenide;
HBT transimpedance amplifier;
10 GHz;
InGaP-GaAs;
56.
A statistical tool for probing the coupling between noisy traps in semiconductor devices, with application to 1/f noise in SiGe HBTs
机译:
一种统计工具,用于探测半导体器件中嘈杂陷阱之间的耦合,在SiGe Hbts中的1 / f噪声应用于1 / f
作者:
Johansen J.A.
;
Birkelund Y.
;
Zhenrong Jin
;
Cressler J.D.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
semiconductor device noise;
1/f noise;
heterojunction bipolar transistors;
Ge-Si alloys;
electric current;
higher order statistics;
time series;
noisy traps;
semiconductor devices;
1/f noise;
silicon-germanium HBT technology;
silicon-germanium heterojunction bipolar transistor;
random telegraph signal noise;
base current;
higher order statistics;
nonlinear coupling;
noise signal frequency components;
time series;
Lorentzian spectra;
57.
Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS
机译:
50 nm门长度CMOS中的微观RF噪声仿真和噪声源模拟
作者:
Guofu Niu
;
Yan Cui
;
Taylor S.S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
semiconductor device noise;
random noise;
CMOS integrated circuits;
radiofrequency integrated circuits;
semiconductor device models;
microscopic RF noise simulation;
noise source modeling;
CMOS;
hydrodynamic noise simulation;
intrinsic noise sources;
Y-representation model;
H-representation model;
50 nm;
58.
High-Q variable inductor using redistributed layers for Si RF circuits
机译:
使用用于SI RF电路的重新分配层的高Q可变电感器
作者:
Sugawara H.
;
Ito H.
;
Okada K.
;
Itoi K.
;
Sato M.
;
Abe H.
;
Ito T.
;
Masu K.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
inductors;
silicon;
UHF integrated circuits;
CMOS integrated circuits;
magnetic shielding;
microactuators;
inductance;
Q-factor;
high-Q inductor;
variable inductor;
redistributed layers;
RF circuits;
magnetic flux shielding;
metal plate;
MEMS actuator;
quality factor;
CMOS circuits;
2 GHz;
Si;
59.
Analysis and circuit modeling of on-chip transformers
机译:
片上变压器的分析与电路建模
作者:
Klemens G.
;
Bhagat M.
;
Jessie D.
;
Fredenick N.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
circuit simulation;
network analysis;
integrated circuit modelling;
transformers;
inductors;
network topology;
cellular radio;
S-parameters;
S-matrix theory;
lumped parameter networks;
equivalent circuits;
on-chip transformers;
circuit analysis;
circuit topologies;
cellular systems;
PCS;
S-parameter matrix;
electromagnetic simulation;
equivalent lumped-element circuit model;
fitting error;
EM simulation;
equivalent circuit models;
on-chip inductors;
60.
Efficient design methodology of polymer based RF MEMS switches
机译:
基于聚合物的RF MEMS开关的高效设计方法
作者:
Ducarouge B.
;
Dubuc D.
;
Melle S.
;
Bary L.
;
Pons P.
;
Plana R.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
microswitches;
optimisation;
network topology;
circuit optimisation;
electromigration;
network synthesis;
microwave switches;
polymers;
RF MEMS switches;
polymer based MEMS switches;
design methodology;
capacitive shunt switch topology;
pull down voltage;
passive circuits;
scalable equivalent electrical model;
electromagnetic simulations;
microwave performance optimization;
electromigration effect;
24 GHz;
22 V;
61.
Design of RF filters using silicon integrated passive components
机译:
使用硅集成无源组件设计RF滤波器
作者:
Kamgaing T.
;
Henderson R.
;
Petras M.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
inductors;
silicon;
Ge-Si alloys;
capacitors;
band-pass filters;
low-pass filters;
UHF filters;
microwave filters;
integrated circuit design;
passive filters;
BiCMOS analogue integrated circuits;
UHF integrated circuits;
microwave integrated circuits;
MIM devices;
transformers;
RF filter design;
silicon integrated passive components;
silicon-germanium BiCMOS process;
bandpass filters;
silicon substrate;
monolithic transformers;
inductors;
lowpass filter;
harmonic filter;
quality factor;
high Q inductors;
metal-insulator-metal capacitors;
MIM capacitors;
1.7 to 10 GHz;
0.4 micron;
Si;
SiGe;
62.
High-speed SiGe HBT technology and applications to mm-wave circuits
机译:
高速SiGe HBT技术和应用于MM波电路
作者:
Meister T.F.
;
Knapp H.
;
Schafer H.
;
Aufinger K.
;
Stengl R.
;
Boguth S.
;
Schreiter R.
;
Rest M.
;
Perndl W.
;
Wurzer M.
;
Bottner T.
;
Bock J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
semiconductor materials;
millimetre wave bipolar transistors;
bipolar MIMIC;
heterojunction bipolar transistors;
voltage-controlled oscillators;
frequency dividers;
MMIC frequency convertors;
integrated circuit design;
integrated circuit measurement;
high-speed SiGe HBT technology;
mm-wave circuits applications;
SiGe bipolar technology;
transit frequency;
maximum oscillation frequency;
ring oscillator gate delay time;
dynamic frequency divider;
static frequency divider;
dual modulus prescaler;
VCO;
high frequency circuits;
206 GHz;
200 GHz;
3.9 ps;
110 GHz;
86 GHz;
52 GHz;
98 GHz;
SiGe;
63.
Integrated electronic equalizer for dispersion compensation in 10 Gb/s fiber networks
机译:
集成电子均衡器,用于10 GB / S光纤网络中的色散补偿
作者:
Kakani V.
;
Dai F.F.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
compensation;
feedback;
Ge-Si alloys;
equalisers;
optical communication equipment;
optical fibre dispersion;
circuit optimisation;
delays;
integrated circuit design;
integrated electronic equalizer;
polarization mode dispersion compensation;
fiber networks;
high-speed transversal equalizer;
silicon-germanium technology;
group delay;
feedback;
10 Gbit/s;
SiGe;
64.
An 8.4-12.0 GHz down-conversion mixer implemented in SiGe HBT technology
机译:
8.4-12.0 GHz下转换搅拌机,在SIGE HBT技术中实现
作者:
Comeau J.P.
;
Cressler J.D.
;
Lee J.
;
Joseph A.J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MMIC mixers;
bipolar MMIC;
heterojunction bipolar transistors;
Ge-Si alloys;
semiconductor materials;
double-balanced Gilbert cell mixer;
down-conversion mixer;
HBT;
conversion gain;
input-referred third order intercept point;
mixer comparison figure-of-merit;
8.4 to 12.0 GHz;
12.6 dB;
14 dB;
12.4 dB;
1.25 GHz;
12 mW;
3.0 V;
SiGe;
65.
A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process
机译:
具有使用SiGe HBT过程的输入/输出有源平衡器的1-6 GHz整体上转换混合器
作者:
Sang-Heung Lee
;
Hyun-Chul Bae
;
Seung-Yun Lee
;
Jongdae Kim
;
Bo Woo Kim
;
Jin-Yeong Kang
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MMIC mixers;
baluns;
heterojunction bipolar transistors;
bipolar MMIC;
Ge-Si alloys;
semiconductor materials;
MMIC up-conversion mixer;
input/output active baluns;
HBT process;
RF transmitter;
LO/RF wideband matching circuits;
LO/IF input balun circuit;
RF output balun circuit;
power conversion gain;
LO/IF isolation;
LO/RF isolation;
1 to 6 GHz;
0.8 micron;
4.5 GHz;
29 mA;
3.0 V;
2.7 mm;
1.6 mm;
SiGe;
66.
Boosting up performance of power SiGe HBTs using advanced layout concept
机译:
使用高级布局概念提高电源SiGe HBT的性能
作者:
Guogong Wang
;
Chao Qin
;
Ningyue Jiang
;
Zhenqiang Ma
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
power bipolar transistors;
heat transfer;
thermal resistance;
power silicon-germanium HBT;
power HBT;
power transistors;
advanced power device layout structure;
heat transfer counterbalanced layout;
thermal effects;
ballasting resistors;
thermal resistance matrix;
SiGe;
67.
Systems engineering of RF system-on-wafer applications in SiGe radar active electronic steered array example
机译:
SiGE中RF系统上晶圆应用的系统工程雷达有源电子转向阵列示例
作者:
Schiff S.C.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
wafer-scale integration;
phased array radar;
bipolar MIMIC;
Ge-Si alloys;
semiconductor materials;
low-power electronics;
modules;
integrated circuit packaging;
integrated circuit yield;
RF system-on-wafer;
radar active electronic steered array;
Ku-band systems;
low-power transmit-receive modules;
module lattice;
RF-logic integration;
AESA coherent radar;
millimeter wave bipolar IC;
circuit yield;
monopulse radar;
phased array radar;
wafer scale integration;
200 GHz;
SiGe;
68.
Systems engineering of RF system-on-wafer applications in SiGe radar active electronic steered array example
机译:
SiGE中RF系统上晶圆应用的系统工程雷达有源电子转向阵列示例
作者:
Schiff S.C.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
wafer-scale integration;
phased array radar;
bipolar MIMIC;
Ge-Si alloys;
semiconductor materials;
low-power electronics;
modules;
integrated circuit packaging;
integrated circuit yield;
RF system-on-wafer;
radar active electronic steered array;
Ku-band systems;
low-power transmit-receive modules;
module lattice;
RF-logic integration;
AESA coherent radar;
millimeter wave bipolar IC;
circuit yield;
monopulse radar;
phased array radar;
wafer scale integration;
200 GHz;
SiGe;
69.
RF MEMS resonator for CMOS back-end-of-line integration
机译:
RF MEMS谐振器,用于CMOS后端集成
作者:
Pacheco S.
;
Zurcher P.
;
Young S.
;
Weston D.
;
Dauksher W.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
micromechanical resonators;
CMOS analogue integrated circuits;
low-temperature techniques;
voltage measurement;
microwave integrated circuits;
RF MEMS resonator;
CMOS back-end-of-line integration;
BEOL;
low-temperature process flow;
exural-mode resonator beams;
bi-layer;
DC measurements;
pull-down voltage;
electric field breakdown;
electrode to resonator beam gap;
RF response;
11 to 11.6 MHz;
TaN;
SiON;
70.
Monolithically integrated IMPATT diodes for Ka-band transmitters
机译:
用于KA波段发射器的单片集成的灭活二极管
作者:
Schollhorn C.J.
;
Xu H.
;
Morschbach M.
;
Kasper E.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
IMPATT diodes;
radio transmitters;
microwave antennas;
slot antennas;
silicon;
coplanar waveguides;
resonators;
S-parameters;
radar antennas;
Ka-band transmitters;
S-parameter measurements;
high-frequency radar systems;
monolithically integrated IMPATT diodes;
coplanar waveguide resonator;
planar slot antenna;
performance;
silicon substrate;
200 micron;
71.
24 and 36 GHz SiGe HBT power amplifiers
机译:
24和36 GHz SIGE HBT功率放大器
作者:
Chartier S.
;
Sonmez E.
;
Schumacher H.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
MMIC power amplifiers;
millimetre wave power amplifiers;
bipolar MIMIC;
bipolar MMIC;
integrated circuit design;
Ge-Si alloys;
power amplifiers;
silicon-germanium HBT technology;
ISM band;
traffic applications;
automotive applications;
MMIC amplifiers;
24 GHz;
36 GHz;
SiGe;
72.
A compact nonlinear model for coplanar waveguides on silicon substrates
机译:
硅基板上的共面波导的紧凑非线性模型
作者:
Sun Z.
;
Fay P.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
coplanar waveguides;
capacitance;
nonlinear network analysis;
equivalent circuits;
silicon;
substrates;
electric admittance;
semiconductor doping;
Poisson equation;
S-parameters;
semiconductor device models;
integrated circuit modelling;
nonlinear model;
quasi-TEM coplanar waveguides;
silicon substrates;
wideband equivalent circuit model;
quasi-TEM CPW;
nonlinear junction conductances;
bias-dependent junction conductances;
substrate doping concentration;
transmission line geometry;
CPW capacitance;
Poisson equation;
n-type substrates;
p-type substrates;
doping concentration;
transmission line S-parameters;
back-to-back metal-semiconductor junction contact model;
Schottky barrier height;
one-sided junction model;
100 MHz to 10 GHz;
Si;
73.
Efficient encoding scheme for ultra-fast flash ADC
机译:
超快速闪光ADC的高效编码方案
作者:
Choudhury J.
;
Massiha G.H.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
programmable logic arrays;
analogue-digital conversion;
encoding;
CMOS integrated circuits;
system-on-chip;
integrated circuit design;
logic design;
encoding scheme;
ultra-fast flash ADC;
programmable logic array;
flash analog to digital converter;
comparator;
sample-and-hold circuit;
CMOS based encoder;
system-on-chip;
74.
RF-MEMS SPDT switch on silicon substrate for space applications
机译:
RF-MEMS SPDT开关用于空间应用的硅衬底
作者:
Farinelli P.
;
Giacomozzi F.
;
Mannocchi G.
;
Marcelli R.
;
Margesin B.
;
Mezzanotte P.
;
Di Nardo S.
;
Russer P.
;
Sorrentino R.
;
Vitulli F.
;
Vietzorreck L.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon;
microswitches;
microwave switches;
substrates;
micromachining;
RF-MEMS SPDT switch;
silicon substrate;
space applications;
miniaturized switch;
switch matrix;
micromachining technology;
broadband single-pole-double-throw switch;
design process;
fabrication process;
0 to 30 GHz;
Si;
75.
SOI voltage controlled ring oscillator
机译:
SOI电压控制环振荡器
作者:
Venkataraman S.
;
Zhu X.
;
Zhang Y.
;
Hutchens C.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon-on-insulator;
voltage-controlled oscillators;
timing jitter;
MOS analogue integrated circuits;
network analysis;
integrated circuit design;
SOI voltage controlled ring oscillator;
voltage controlled oscillators;
VCO;
seven-stage oscillators;
twenty-one-stage oscillators;
inverter-chain oscillators;
power supply voltage;
timing jitter;
body voltages;
MOSFET;
oscillation frequency;
oscillator analysis;
oscillator design;
0.5 micron;
Si;
76.
Modeling and characterization of integrated passive elements for applications in silicon high frequency systems
机译:
硅高频系统应用集成无源元件的建模与表征
作者:
Caverly R.H.
;
Walsh T.
;
Reifsnyder J.
;
Pearson S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
passive networks;
silicon;
HF amplifiers;
software packages;
integrated circuit modelling;
CMOS integrated circuits;
capacitors;
inductors;
MOS integrated circuits;
integrated passive elements;
process-independent structures;
silicon CMOS process;
amplifier;
capacitor;
inductor;
MOSFET;
software packages;
run-to-run stability;
element values;
silicon high frequency systems;
robust integrated circuit;
passive element modeling;
77.
Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology
机译:
Si / SiGe HBT BICMOS技术的机械平面双轴应变效应
作者:
Nayeem M.B.
;
Haugerud B.M.
;
Krithivasan R.
;
Yuan Lu
;
Chendong Zhu
;
Belford R.E.
;
Cressler J.D.
;
Joseph A.J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
BiCMOS integrated circuits;
tensile testing;
heterojunction bipolar transistors;
carrier mobility;
field effect transistor circuits;
mechanical planar biaxial tensile strain;
Si/SiGe HBT;
epitaxial-base Si BJT control;
saturation current;
effective mobility;
nFET;
decreased collector current;
current gain;
BiCMOS technology;
Ge-Si;
78.
Advances in SiGe HBT BiCMOS technology
机译:
SiGe HBT BICMOS技术进步
作者:
Joseph A.
;
Lanzerotti L.
;
Liu X.
;
Sheridan D.
;
Johnson J.
;
Liu Q.
;
Dunn J.
;
Rieh J.-S.
;
Harame D.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
BiCMOS integrated circuits;
Ge-Si alloys;
bipolar MMIC;
bipolar MIMIC;
UHF integrated circuits;
CMOS integrated circuits;
silicon-germanium transistors;
HBT;
BiCMOS technology;
heterojunction bipolar transistor;
communications;
CMOS elements;
passive elements;
0.9 to 77 GHz;
SiGe;
79.
High-speed SiGe HBT technology and applications to mm-wave circuits
机译:
高速SiGe HBT技术和应用于MM波电路
作者:
Meister T.F.
;
Knapp H.
;
Schafer H.
;
Aufinger K.
;
Stengl R.
;
Boguth S.
;
Schreiter R.
;
Rest M.
;
Perndl W.
;
Wurzer M.
;
Bottner T.
;
Bock J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
semiconductor materials;
millimetre wave bipolar transistors;
bipolar MIMIC;
heterojunction bipolar transistors;
voltage-controlled oscillators;
frequency dividers;
MMIC frequency convertors;
integrated circuit design;
integrated circuit measurement;
high-speed SiGe HBT technology;
mm-wave circuits applications;
SiGe bipolar technology;
transit frequency;
maximum oscillation frequency;
ring oscillator gate delay time;
dynamic frequency divider;
static frequency divider;
dual modulus prescaler;
VCO;
high frequency circuits;
206 GHz;
200 GHz;
3.9 ps;
110 GHz;
86 GHz;
52 GHz;
98 GHz;
SiGe;
80.
Measurement and modeling of coupling effects of CMOS on-chip coplanar inductors
机译:
CMOS片上共面电感器耦合效应的测量与建模
作者:
Mikkelsen J.H.
;
Jensen O.K.
;
Larsen T.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
inductors;
CMOS integrated circuits;
electromagnetic coupling;
crosstalk;
integrated circuit measurement;
integrated circuit modelling;
coupling effects;
CMOS on-chip coplanar inductors;
guard-rings;
crosstalk;
test fixture;
return current paths;
ground-ring;
mutual inductive coupling;
direct capacitive coupling;
resistive coupling;
190 to 1090 micron;
81.
Development of scalable models for patterned-ground-shield inductors in SiGe BiCMOS technology
机译:
SiGE BICMOS技术中图案地面屏蔽电感器可扩展模型的开发
作者:
Svitek R.
;
Klein A.S.
;
Clifford M.
;
Raman S.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
inductors;
earthing;
electromagnetic shielding;
Q-factor;
lumped parameter networks;
BiCMOS integrated circuits;
radiofrequency integrated circuits;
patterned-ground-shield inductors;
monolithic spiral inductors;
center-grounded ground shield;
perimeter-grounded ground shield;
polysilicon conductor levels;
metal-one conductor levels;
on-wafer measurement;
pad parasitics de-embedding;
inductor quality factor;
scalable lumped-element model;
model extraction;
SiGe:C;
RFBiCMOS process;
0.18 micron;
Ge-Si:C;
82.
RF small signal modeling of tri-gate /spl Omega/ MOSFETs implemented on bulk Si wafers
机译:
在散装Si晶片上实现的三栅/ SPL OMEGA / MOSFET的RF小信号建模
作者:
Nam-Kyun Tak
;
Jong-Ho Lee
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MOSFET;
semiconductor device models;
equivalent circuits;
radiofrequency integrated circuits;
CMOS integrated circuits;
RF small signal modeling;
tri-gate omega MOSFET;
bulk Si wafers;
device simulator;
small signal model parameters;
equivalent circuit;
planar MOSFET;
substrate bias;
cut-off frequency;
drain current;
body-tied finFET;
MOS technology;
Si;
83.
CMOS LNA design for system-on-chip receiver stages
机译:
CMOS LNA设计用于片内接收器级
作者:
Telli A.
;
Askar M.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
CMOS analogue integrated circuits;
UHF amplifiers;
system-on-chip;
radio receivers;
circuit CAD;
integrated circuit design;
cellular radio;
satellite communication;
UHF integrated circuits;
CMOS LNA design;
system-on-chip receiver stages;
narrowband low noise amplifiers;
single-ended low noise amplifiers;
inductive source low noise amplifiers;
degenerated low noise amplifiers;
L-biased DC-bias circuit;
GSM;
S-band;
low earth orbit;
900 MHz;
2025 MHz;
2210 MHz;
0.7 micron;
84.
62-GHz 24-mW static SiGe frequency divider
机译:
62-GHz 24-MW静态SiGe分频器
作者:
Knapp H.
;
Wurzer M.
;
Aufinger K.
;
Bock J.
;
Meister T.F.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
frequency dividers;
current-mode logic;
current-mode circuits;
Ge-Si alloys;
bipolar digital integrated circuits;
bipolar MIMIC;
bipolar MMIC;
flip-flops;
bipolar logic circuits;
buffer circuits;
power consumption;
static frequency divider;
silicon-germanium bipolar process;
current-mode logic;
master-slave flip-flop;
shunt peaking;
power consumption;
24 mW;
4 mW;
2 V;
12 mA;
SiGe;
85.
A wide tuning range CMOS VCO using variable inductor
机译:
使用可变电感的宽调谐范围CMOS VCO
作者:
Yoshihara Y.
;
Sugawara H.
;
Ito H.
;
Okada K.
;
Masu K.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
voltage-controlled oscillators;
circuit tuning;
CMOS analogue integrated circuits;
UHF integrated circuits;
UHF oscillators;
inductors;
integrated circuit design;
CMOS VCO;
on-chip variable inductor;
wide tuning range VCO;
phase noise;
2.13 to 3.28 GHz;
86.
Extracting of substrate network resistances in RF CMOS transistors
机译:
RF CMOS晶体管中基板网络电阻的提取
作者:
Tabrizi M.M.
;
Fathi E.
;
Fathipour M.
;
Masoumi N.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MOSFET;
CMOS integrated circuits;
radiofrequency integrated circuits;
electric resistance;
semiconductor device models;
substrate network resistance extraction;
RF CMOS transistors;
RF transistors;
multi-finger MOS transistors;
horse-shoe CMOS transistor;
I-V characteristics;
parasitic substrate resistance;
0.25 micron;
87.
A novel low power low voltage LNA and mixer for WLAN IEEE 802.11a standard
机译:
用于WLAN IEEE 802.11a标准的新型低功率低压LNA和混合器
作者:
Xuezhen Wang
;
Weber R.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
MMIC amplifiers;
MMIC mixers;
CMOS analogue integrated circuits;
current mirrors;
radio equipment;
integrated circuit design;
low noise amplifier;
low power low voltage LNA;
low power low voltage mixer;
IEEE 802.11a WLAN;
down-conversion mixer;
CMOS process;
cascode inductive source degeneration structure;
Gilbert cell;
current mirror;
current source transistor;
front-end circuit;
single-sideband noise figure;
return loss;
third-order input intercept point;
conversion gain;
circuit design;
5.8 GHz;
0.18 micron;
5.6 GHz;
1.5 V;
17.2 mW;
7.8 dB;
8 dB;
14.5 dB;
15.7 dB;
88.
Simulation of self-heating in advanced high-speed SiGe bipolar circuits using the temperature simulator TESI
机译:
采用温度模拟器TESI仿真先进的高速SIGE双极电路自热
作者:
Pfost M.
;
Lachner R.
;
Hao Li
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
voltage-controlled oscillators;
temperature distribution;
network synthesis;
circuit simulation;
very high speed integrated circuits;
switching circuits;
bipolar integrated circuits;
buffer circuits;
road vehicle radar;
Ge-Si alloys;
self-heating simulation;
very-high-speed IC;
circuit design;
temperature increase;
three-dimensional numerical temperature simulator;
power multiplexer;
buffer stage;
VCO;
automotive radar;
high-speed bipolar circuits;
SiGe;
TESI temperature simulator;
40 Gbit/s;
77 GHz;
Ge-Si;
89.
Development of characterization methods for micromachined embedded test structures
机译:
微机械嵌入式测试结构的表征方法的开发
作者:
Davies-Venn E.
;
Pan T.
;
Baldi A.
;
Drayton R.F.
;
Ziaie B.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
micromachining;
embedded systems;
Q-factor measurement;
silicon;
coils;
S-parameters;
inductors;
passive networks;
integrated circuit design;
characterization methods;
micromachined embedded test structures;
low frequency embedded passives;
silicon substrates;
durioid fixtures;
Q factor;
embedded coils;
feedline designs;
quality factor;
S-parameter measurements;
inductor performance;
on-wafer measurements;
90.
Compact Doppler sensor operating at 31-32 GHz using a SiGe HBT MMIC and patch antennas
机译:
紧凑型多普勒传感器在31-32 GHz下使用SiGe HBT MMIC和Patch Antennas运行
作者:
Abele R.
;
Trasser A.
;
Schad K.-B.
;
Sonmez E.
;
Schumacher H.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
MMIC mixers;
microstrip antennas;
Doppler radar;
millimetre wave detectors;
transmitting antennas;
receiving antennas;
millimetre wave antennas;
bipolar integrated circuits;
millimetre wave bipolar transistors;
heterojunction bipolar transistors;
millimetre wave oscillators;
lumped parameter networks;
laminates;
substrates;
flip-chip devices;
compact Doppler sensor;
SiGe MMIC;
patch antennas;
transmitting antennas;
receiving antennas;
HBT MMIC;
differential oscillator;
balanced Gilbert cell mixer;
lumped elements;
flip-chip mounting;
interconnect losses;
microwave laminate substrate TMM3;
31 to 32 GHz;
Ge-Si;
91.
SOI voltage controlled ring oscillator
机译:
SOI电压控制环振荡器
作者:
Venkataraman S.
;
Zhu X.
;
Zhang Y.
;
Hutchens C.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon-on-insulator;
voltage-controlled oscillators;
timing jitter;
MOS analogue integrated circuits;
network analysis;
integrated circuit design;
SOI voltage controlled ring oscillator;
voltage controlled oscillators;
VCO;
seven-stage oscillators;
twenty-one-stage oscillators;
inverter-chain oscillators;
power supply voltage;
timing jitter;
body voltages;
MOSFET;
oscillation frequency;
oscillator analysis;
oscillator design;
0.5 micron;
Si;
92.
A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator
机译:
SiGe HBT 24 GHz子谐波直接转换IQ-解调器
作者:
Lindberg P.
;
Ojefors E.
;
Sonmez E.
;
Rydberg A.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
heterojunction bipolar transistors;
demodulators;
Ge-Si alloys;
radio receivers;
bipolar MMIC;
integrated circuit design;
silicon-germanium HBT;
subharmonic direct-conversion IQ-demodulator;
direct conversion receiver;
substrate;
conversion gain;
LO/RF isolation;
compression point;
24 GHz;
20 ohmcm;
11 dB;
101 mA;
3 V;
SiGe;
93.
High-Q integrated passive elements for high frequency applications
机译:
高Q集成的高频应用无源元件
作者:
Peroulis D.
;
Mohammadi S.
;
Katehi L.P.B.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
micromechanical devices;
Q-factor;
varactors;
thin film inductors;
transformers;
circuit resonance;
circuit tuning;
high-Q integrated passive elements;
MEMS fabrication technology;
very high frequency varactors;
high resistivity silicon substrate;
broadband analog varactors;
varactor tuning range;
inductors;
high efficiency transformers;
transformer coupling factor;
transformer self-resonance frequency;
post-processing step;
vertical chip/interposer packaging;
3 to 7 GHz;
8 to 16 GHz;
Si;
94.
A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique
机译:
使用电压分割和偏置级移位技术1V 5 GHz低相位噪声LC-VCO
作者:
Taeksang Song
;
Euisik Yoon
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
voltage-controlled oscillators;
phase noise;
voltage dividers;
circuit tuning;
Q-factor;
low phase noise LC-VCO;
voltage dividing;
bias-level shifting;
loaded Q-factor degradation;
oscillation amplitude;
tuning range;
95.
Microstrip circuits on micromachined silicon
机译:
微芯片硅上的微带电路
作者:
Hasch J.
;
Irion H.
;
Muller A.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
silicon;
microstrip circuits;
microstrip transitions;
MIMIC;
micromachining;
passive networks;
distributed parameter networks;
substrates;
coplanar transmission lines;
microstrip circuits;
micromachined silicon;
monolithic integration;
millimeter wave system;
low loss passive circuitry;
transmission line elements;
distributed passive components;
bulk micromachining;
high resistivity silicon on insulator wafers;
SOI wafers;
silicon membranes;
coplanar-microstrip transitions;
microstrip lines;
Si;
96.
MM-wave transceivers using SiGe HBT technology
机译:
使用SiGe HBT技术的MM波收发器
作者:
Gaucher B.
;
Beukema T.
;
Reynolds S.
;
Floyd B.
;
Zwick T.
;
Pfeiffer U.
;
Liu D.
;
Cressler J.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
Ge-Si alloys;
millimetre wave bipolar transistors;
heterojunction bipolar transistors;
transceivers;
wireless LAN;
personal area networks;
IEEE standards;
power consumption;
MM-wave transceivers;
SiGe;
HBT technology;
high-speed wireless;
wireless local area network;
WLAN;
wireless personal-area network;
WPAN;
IEEE standards;
FCC restrictions;
maximum radiated power;
power spectral density;
bandwidth limitations;
ISM bands;
power consumption;
portable devices;
60 GHz;
Ge-Si;
97.
Dynamic characterization and model comparison of high frequency FET devices
机译:
高频FET器件的动态特征与模型比较
作者:
Dawande M.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
circuit simulation;
field effect transistor circuits;
semiconductor device models;
precision dynamic characterization;
model comparison;
high frequency FET devices;
fast pulses;
large signal models;
binning models;
ADS simulation tool;
Statz model;
TOM model;
Angelov model;
98.
Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect
机译:
低频噪声为90 nm nfet:热载体降解和氘效果
作者:
Erturk M.
;
Anna R.
;
Xia T.
;
Clark W.F.
;
Nexvton K.M.
;
Pekarik J.J.
;
Lamothe C.J.
;
Lacroix M.R.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
deuterium;
field effect transistors;
semiconductor device noise;
thermal noise;
low-frequency noise;
nFET;
FET;
hot-carrier degradation;
deuterium processing;
noise degradation;
90 nm;
D/sub 2/;
99.
Substrate coupling noise issues in silicon technology
机译:
硅技术衬底耦合噪声问题
作者:
Jenkins K.A.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
crosstalk;
silicon;
substrates;
semiconductor device noise;
substrate coupling noise;
silicon integrated circuits;
substrate crosstalk;
100.
62-GHz 24-mW static SiGe frequency divider
机译:
62-GHz 24-MW静态SiGe分频器
作者:
Knapp H.
;
Wurzer M.
;
Aufinger K.
;
Bock J.
;
Meister T.F.
会议名称:
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》
|
2004年
关键词:
frequency dividers;
current-mode logic;
current-mode circuits;
Ge-Si alloys;
bipolar digital integrated circuits;
bipolar MIMIC;
bipolar MMIC;
flip-flops;
bipolar logic circuits;
buffer circuits;
power consumption;
static frequency divider;
silicon-germanium bipolar process;
current-mode logic;
master-slave flip-flop;
shunt peaking;
power consumption;
24 mW;
4 mW;
2 V;
12 mA;
SiGe;
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