Titanium nitride (TiN) layers are currently used both as diffusion barriers and as glue layers for poorly adhering materials in the semiconductor industry. Until recently titanium nitride was deposited by PVD method with a poor step coverage. Some TiN CVD methods were developed but present drawbacks (chlorides contamination, high resistivity). A new CVD process is now developed with a desirable step coverage and a low resistivity. This one consists of a sequential OMCVD-plasma treatment process allowing a deposition of films with resistivity lower than 300 /spl mu//spl Omega/.cm. The present paper deals with TiN performances as barrier materials for copper integration in dual damascene architecture.
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机译：目前使用氮化钛（锡）层作为扩散屏障和胶水层，用于半导体工业中的材料粘附不良。直到最近通过PVD方法沉积氮化钛，步长覆盖不良。一些锡CVD方法是开发的，但存在缺点（氯化物污染，高电阻率）。现在开发出一种新的CVD工艺，具有期望的步骤覆盖和低电阻率。该允许该允许具有低于300 / SPL Mu // SPLω/ .cm的电阻率的薄膜沉积膜的顺序OMCVD等离子体处理过程。本文涉及双层镶嵌结构中铜集成的屏障材料。
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