Growth, Structure and Photoluminescence of SiGe/Si quantum wires and dots on patterned Si (001) substrates

摘要

Self-organized growth of Si/SiiGtex/Si quantum wire and quantum dot structures on patterned Si(001) substrates during low pressure chemical vapour deposition was investigated for 0.2 <, x < 0.4 and for nominal layer thicknesses t < 4nm. Depositions were performed on V-shaped grooves bounded by {111} facets, grooves with L-shape cor-ners bounded by {111} and {100} facets, and inverse pyramids bounded by {111} facets. Structure, strain state and composition were analysed by transmission electron microscopy and by spatially resolved energy-dispersive X-ray spectroscopy. The results were compared with photoluminescence measurements.