Transmission electron microscopy and photoluminescence studies of In_(1-x)Ga_xAs_yP_(1-y) films grown on < 100 > InP substrates

摘要

The growth of lattice matched and strained In1_xGaJCAsyP1.jr layers on < 001 > InP substrates has been studied by TEM and PL. Both studies point to phase separation. The PL signal shows temperature dependent intensity variations and peak shifts consistent with phase separation for layers whose composition lies within the miscibility gap. TEM studies show that the separation occurs along [110], with a modulation of lOnm in lattice matched layers. In layers under tension, phase separation is linked to a change in growth mode from <001 > to faceted growth.