Triple-axis X-ray Reciprocal Space Mapping of In(y)Ga(1-y)As Thermophotovoltaic Diodes Grown on (100)InP Substrates

摘要

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of In(sub y)Ga(sub 1-y)As/InP(sub 1-x)As(sub x) thermophotovoltaic (TPV) diodes grown by metal organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis x-ray reciprocal space mapping techniques. In(sub 0.53)Ga(sub 0.47)As (E(sub gap) = 0.74eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice mismatched (LMM) In(sub 0.67)Ga(sub 0.33)As (E)sub gap) = 0.6eV) TPV diodes are grown on three-step InP(sub 1-x)As(sub x) (0