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Al-Cu alloy etching using in-reactor aluminum chloride formation in static magnetron triode reactive ion etching

机译:在静态磁控硅三极管反应离子蚀刻中使用反应器铝氯化铝形成的Al-Cu合金蚀刻

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This paper presents a new Al-Cu alloy etching system that uses aluminum chloride formed in static magnetron triode reactive ion etching (SMTRIE). An overview of SMTRIE is provided, along with a description of the mechanism of copper chloride vaporization with aluminum chloride. Four axisymmetric coils produce radial magnetic flux near and parallel to the etching cathode, and cylindrical magnetic flux parallel to the surrounding second side cathode. This field creates a radially uniform magnetron-type discharge. Etching results demonstrate the excellent uniformity of SMTRIE with low MOS gate damage.
机译:本文介绍了一种新的Al-Cu合金蚀刻系统,使用在静电磁控硅三极管反应离子蚀刻(SMTrie)中形成的氯化铝。提供SMTRIE的概述,以及用氯化铝氯化铜蒸发机理的描述。四个轴对称线圈产生接近并平行于蚀刻阴极的径向磁通量,以及平行于周围的第二侧阴极的圆柱磁通。该字段产生径向均匀的磁控型放电。蚀刻结果表明,SMTRIE具有低MOS栅极损坏的优异均匀性。

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