AlGaInP materials grown by elemental-source molecular beam epitaxy

摘要

rt on the growth of AlGaInP materials on GaAs substrates using solid, elemental phosphorus in a valved cracker source by molecular beam epitaxy (MBE). The two ternaries are found to be of comparable or better quality than material grown by other, more conventional techniques which use phosphine. The successful growth and doping of the quaternary is reported and recent work in the growth of GaInP quantum well (QW) lasers is discussed. Finally, the compatibility of the valved source in growing arsenide/phosphide heterojunctions is demonstrated.