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Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响

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Hajer Makhloufi; Poonyasiri Boonpeng; Simone Mazzucato; Julien Nicolai; Alexandre Arnoult; Teresa Hungria; Guy Lacoste; Christophe Gatel; Anne Ponchet; Hélène Carrère; Xavier Marie; Chantal Fontaine;
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1. Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-Ⅱ quantum well grown by gas source molecular beam epitaxy [J] . Wenwu Pan, Liyao Zhang, Liang Zhu, Journal of Applied Physics . 2016,第10期

机译：气源分子束外延生长InGaAs / GaAsBi / InGaAsⅡ型量子阱的光学性质和能带弯曲
2. Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy [J] . Pan Wenwu, Zhang Liyao, Zhu Liang, Semiconductor science and technology . 2017,第1期

机译：气源分子束外延生长的InGaAs / GaAsBi / InGaAs II型量子阱的光致发光
3. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique [J] . Patil Pallavi Kisan, Luna Esperanza, Matsuda Teruyoshi, Nanotechnology . 2017,第10期

机译：使用双基板温度技术，通过分子束外延生长Gaasbi / GaAs多量子良好的LED
4. Electrical properties in pseudomorphic modulation-boped N-AlGaAs/InGaAs/GaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy [C] . N.Saka, T.Hotta, S.Shimomura, The Third SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing . 2000

机译：通过分子束外延生长在（411）A GaAs衬底上生长的伪定型调制键合N-AlGaAs / InGaAs / GaAs量子阱中的电学性质
5. Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy [D] . Kasanaboina, Pavan Kumar. 2016

机译：通过分子束外延生长的GaAs / Gaassb（N）核心壳纳米线的带隙调谐
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy [O] . Pan, W. W., Zhang, L. Y., Zhu, L., 2016

机译：气源分子束外延生长InGaAs / GaAsBi / InGaAs II型量子阱的光学性质和能带弯曲

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

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