Study on the Materials Properties of Semiconductor Heterostructures Grown by Molecular Beam Epitaxy

摘要

The formation processes and the basic properties of semiconductor heterostructures grown by molecular beam epitaxy (MBE) technique were studied, in order to utilize material systems including semiconductor heterostructures for electronics. Heterostructures consist of ultra thin films and heterointerfaces, and those with some periodicities are superlattices. Recently, the application of heterostructures has been thought to be useful for electronic devices. However, the basic properties of heterostructures have not been completely understood yet at any stage of ultra thin films, heterointerfaces and superlattices. The guiding principle for the design of heterostructures has not been established, and the material sytems in which we can take advantage of heterostructures properly is not identified. The main subject o f the understanding of the basic properties from the view point of material designing and the exploitation oF new material systems, regarding segarding semiconductor heterostructures. First, the structure formation processes and the electronic structures of ultra thin films and heterointerfaces were investigated on III-V group compound semiconductor systems. Second, the lattice and electronic structures of superlattices were examined on IV group semiconductor systems.