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Impact of CD control on circuit yield in submicron lithography

机译:CD控制对亚微米光刻电路产量的影响

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As tolerance as a percent of feature size increases for sub- micron technologies with increased scaling, yield loses due to circuit performance fluctuations will increase. Therefore for sub-micron technologies a tradeoff has to be made between circuit performance yield and the purchase of more expensive processing equipment that can more tightly control critical dimensions. At the same time, the development time of a circuit that is to be manufactured on a process with higher parameter tolerances will increase, and this has to be traded off with the process development time needed to reduce tolerances. In this paper, the performance yield problem for sub-micron technologies is addressed, as it relates to tolerance in geometric feature sizes and alignment. Using a statistical model of process fluctuations, examples are presented showing that different tolerance requirements are needed for different circuits.
机译:由于容差作为具有增加的缩放的子微米技术的特征尺寸的百分比增加,由于电路性能波动导致的产量失去将增加。因此,对于子微米技术,必须在电路性能产量和购买更昂贵的加工设备之间进行权衡,这些设备可以更加紧密控制临界尺寸。同时,在具有较高参数公差的过程中要制造的电路的开发时间将增加,这必须通过减少公差所需的过程开发时间来交易。在本文中,解决了子微米技术的性能产量问题,因为它涉及几何特征尺寸和对准中的公差。使用过程波动的统计模型,提出了示例,示出了不同电路需要不同的公差要求。

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