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Impact of CD control on circuit yield in submicron lithography

机译:CD控制对亚微米光刻中电路成品率的影响

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Abstract: As tolerance as a percent of feature size increases for sub- micron technologies with increased scaling, yield loses due to circuit performance fluctuations will increase. Therefore for sub-micron technologies a tradeoff has to be made between circuit performance yield and the purchase of more expensive processing equipment that can more tightly control critical dimensions. At the same time, the development time of a circuit that is to be manufactured on a process with higher parameter tolerances will increase, and this has to be traded off with the process development time needed to reduce tolerances. In this paper, the performance yield problem for sub-micron technologies is addressed, as it relates to tolerance in geometric feature sizes and alignment. Using a statistical model of process fluctuations, examples are presented showing that different tolerance requirements are needed for different circuits.!12
机译:摘要:随着缩放比例的增加,随着亚微米技术公差的增加(占特征尺寸的百分比),由于电路性能波动而导致的良率损失将增加。因此,对于亚微米技术,必须在电路性能成品率和购买更昂贵的处理设备之间进行权衡,该设备可以更严格地控​​制关键尺寸。同时,将在具有较高参数公差的过程中制造的电路的开发时间将增加,这必须与降低公差所需的过程开发时间进行权衡。在本文中,解决了亚微米技术的性能成品率问题,因为它涉及几何特征尺寸和对齐方式的公差。使用过程波动的统计模型,给出了一些示例,这些示例表明不同电路需要不同的公差要求。!12

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