Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon

摘要

We have grown Si/Si$-1$MIN@x$/Ge$-x$/ multiple quantum wells (x $APEQ 8%) lattice-matched to silicon with well thicknesses between 3 and 20 nm using UHV-CVD. The sample parameters were obtained accurately with high-resolution x-ray diffraction (rocking curves) and transmission electron microscopy. From an analysis of the band-edge related photoluminescence energies we find a blue-shift due to confinement for thin wells.