Improving Photoluminescence Of Highly Strained 1.32 μm Gaassb/gaas Multiple Quantum Wells Grown On Misorientation Substrate

摘要

The (100) GaAs substrates with misorientations of 0°, 2°, 6° , and 15° toward [011] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15° off sample possesses the lowest Sb content of the GaAsSb epi-layer, which thereby means the epitaxy has smaller Sb distribution coefficient. The comparison of photoluminescence (PL) spectra also exhibit that the 15° off sample is with stronger PL intensity and without peak shifting and spectral width broadening. These phenomena show that the crystal quality has been greatly improved by growing GaAsSb/GaAs QW structures on misorientation substrates.