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Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
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机译:基于在Si-Ge-Sn缓冲硅上生长的IV组量子阱的材料和光学器件
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摘要
Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
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机译:提供了具有至少一个经由Sn 1-x Sub> Ge x Sub>缓冲层在Si(100)上无应变生长的量子阱异质结构的半导体结构及其用途。
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