The results of a continued investigation of the formation of self-aligned CoSi/sub 2/ and PtSi are presented. In both cases it is found that simple surface cleaning methods and use of rapid thermal annealing in inert ambients lead to a method of forming these silicides that is reproducible and reliable. The effect of dopants in silicon or polysilicon on such process has also been investigated. These results are described and compared with the available information on the TiSi/sub 2/ process.
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机译:介绍了对形成自对准宇宙/亚2 /和PTSI的形成的持续调查的结果。在这两种情况下,发现简单的表面清洁方法和在惰性的环境中使用快速热退火导致形成可再现和可靠的这些硅化物的方法。还研究了掺杂剂在硅或多晶硅对这些方法的影响。这些结果被描述并与TISI / SUB 2 /过程的可用信息进行了比较。
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