MOCVD growth GaN on sapphire

摘要

The n-type and p-type a-GaN films were successfully grown on a r-sapphire substrate,according to X-ray diffractometer and SEM results parameters measurement.The growth rate versus the growth temperature was investigated.The holes concentration(8×10~(17)cm”3)was achieved by the Cp2Mg flow optimization and the parameters of thermal annealing in nitrogen.The GaN film growth rate dependence versus temperature at a constant hydrogen flow through a TEG source was investigated.The results indicate that defects density is reduced upto 10~4 cm~(-1),the surface morphology uniformity was improved.During growth the influence from V/III flows ratio was detected.