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Mechanistic and Electrochemical Aspects of Copper Post CMP Cleaners for 5-7 nm Nodes(PPT)

机译:铜后CMP清洁剂的机械和电化学方面为5-7纳米节点(PPT)

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1. Charge repulsion shown to be a key driver towards cleaning performance 2. Rate of attack on Cuf li-BTA polymer, dispersion and complexation important for removal and preventing re-deposition of organic residues and particles 3. OCP gap must be minimized by optimal iigand selection to minimize galvanic corrosion Impedance spectroscopy and Tafei plots have been used to Optimize corrosion inhibiting package 4. Very low Cu roughnesses can be obtained with the correct inhibitor (4 A)
机译:1.对清洁性能的关键驾驶员表示充电排斥2.对Cuf的攻击率Li-BTA聚合物,分散和络合对于去除和预防有机残留物和颗粒的重新沉积重要性。OCP间隙必须通过最佳最小化IIGAND选择最小化电抗腐蚀阻抗光谱和Tafei图已被用于优化腐蚀抑制包装4.使用正确的抑制剂可以获得非常低的Cu粗糙度(4A)

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