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Applying system modeling to define 2.5 - d and 3 - d packaging roadmaps

机译:应用系统建模定义2.5 - D和3 - D包装路线图

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Though work on 3-d and later 2.5-d packaging has been going on now for over 5 years, we do not yet see large applications in areas other than traditional heterogeneous integration e, g. in camera modules. Adoption of 2.5-d Si interposer technology in 2010-11 to build FPGA modules on a commercial scale had generated much enthusiasm and expectation that floodgates will open for wide use of this technology e, g. in every Smart Phone but that has not yet materialized, giving rise to a shift in attention in Blogs and Conferences from purely digital applications e.g. processor - memory modules to more performance driven and cost insensitive applications e.g. heterogeneous modules for electro - optic I/O in servers etc. Roadmaps for emerging technologies like 3-d stacking or 2.5-d modules are developed taking process maturity into consideration but they must also anticipate major applications. Such applications using a new technology can succeed only if there are overwhelming advantages in performance and system cost that negate increases in module costs. When the author and his team developed electroplated solder bump flip chip technology and their high volume implementation at two of the leading IDMs over 2 decades ago, both performance (electrical) and cost modeling were used to short list applications most likely to succeed and limit process development only for those applications. Countless users & providers of flip chip technology since then have benefited from this original work on electroplated solder and pillar bumps as well as build up type organic substrate technologies. A similar theoretical approach is sorely needed in the development of 2.5-d and 3-d technologies to define the most cost - effective configurations and focus development work on only those. In this work we will discuss the Bandwidth and Power consumption (two of the key drivers for die stacking) of various 2.5-d and 3-d package configurations then compare them based on simulation results.
机译:虽然在3-D和更晚的2.5-D包装上的工作已经超过5年,但我们尚未在传统的异构整合E,G的区域中看到大型应用。在相机模块中。 2010-11在2010-11中采用2.5-D SI插入技术,以建立商业规模的FPGA模块产生了很大的热情和期望,闸门将为广泛使用这项技术E,G。在每个智能手机中,但尚未实现,从纯粹的数字应用中引发了博客和会议的关注转变。处理器 - 存储器模块更具性能驱动和成本不敏感应用。用于在服务器中的电光I / O的异构模块等。如3-D堆叠或2.5-D模块的新兴技术的路线图进行了考虑的过程成熟,但它们还必须预期主要应用。只有在否定模块成本增加的性能和系统成本中存在压倒性的优势,使用新技术的这种应用程序才能成功。当提交人和他的团队开发了电镀焊接凸屑芯片技术时,在2年前在两个领先的IDMS中开发了电镀焊料凸屑芯片技术,而且两者的性能(电气)和成本建模都用于短名单应用程序,最有可能成功和限制过程仅对这些应用程序进行开发。从那时起,倒装芯片技术的无数用户和供应商从电镀焊接和支柱凸块上的这种原创作品中受益,以及建立型有机基板技术。在2.5-D和3-D技术的开发中,非常需要类似的理论方法,以定义最具成本效益的配置和仅限于那些的关注开发工作。在这项工作中,我们将讨论各种2.5-D和3-D封装配置的带宽和功耗(用于模具堆叠的两个关键驱动器),然后根据仿真结果进行比较它们。

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