Tin diselenide thin films with thickness of the order of 300 nm are deposited on glass substrate at a substrate temperature of 523±5 K and pressure of 10~(-5) mbar using reactive evaporation, a variant of Gunther's three temperature method. High purity tin (99.999%) and selenium (99.99%) were used as the elemental starting materials. The deposited film is characterized structurally using X-Ray Diffraction (XRD). The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are evaluated. Optical absorption spectrum of the film is analysed using UV-Vis-NIR Spectrophotometer.
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