机译:热蒸发法沉积二硒化铜铟硒薄膜的生长,结构和光学性质
Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat, India;
Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat, India;
Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat, India;
Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat, India;
Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat, India;
CuInSe_2 thin film; thermal evaporation; X-ray diffraction; energy dispersive X-ray analysis; atomic force microscopy; transmission measurements;
机译:通过热蒸发法制备的铜铟二硒化物薄膜的结构,电学和光学性质
机译:闪蒸铜铟二硒化物薄膜的结构,光学和电学性质
机译:闪蒸铜铟二硒化物薄膜的结构,光学和电学性质
机译:使用化学浴沉积和热蒸发的杂种方法铜铟五烯化薄膜
机译:铜铟镓二硒化物薄膜的光学表征
机译:低真空度热蒸发法制备a-Se薄膜的结构光学和X射线响应特性研究
机译:化学沉积的非晶体铜铟五烯化膜的结构,光学和电性能
机译:化学气相沉积铜铟二硒薄膜材料研究。最终报告,1982年11月15日至1984年1月