The Measurement of Dislocation on InP Wafers

摘要

We studied the effect of HCl, H_3PO_4, HBr etchants, temperature, illumination on the display of dislocation pits on ?100? InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.