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Characterization of Semi-Insulating InP Wafers by Scanning Luminescence (SPL), Scanning Photocurrent (SPC) and Cathodoluminescence (CL). Study of the Wafer Homogeneity

机译：通过扫描发光（spL），扫描光电流（spC）和阴极发光（CL）表征半绝缘Inp晶片。晶圆同质性研究

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This report results from a contract tasking Universidad of Valladolid as follows: The contractor will investigate the distribution of iron in InP wafers using the techniques of scanning photoluminescence and scanning photocurrent.

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作者
Lopez, J. J.;
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年度 2000
页码 1-80
总页数 80
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Photoluminescence; Cathodoluminescence; Wafers; Luminescence; Photoelectricity; Scanning; Insulation; Iron; Indium phosphides; Homogeneity;

机译：光致发光;阴极发光;晶片;发光;光电;扫描;绝缘;铁;磷化铟;均匀性;

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专利

1. Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy [J] . El Harrouni I, Bluet JM, Ziane D, The European physical journal. Applied physics . 2004,第1a3期

机译：紫外扫描光致发光光谱法研究4H-SiC外延晶片的微观缺陷和均匀性
2. Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST) [J] . Passapong Wutimakun, Chumpol Buteprongjit, Jun Morimoto Journal of Crystal Growth . 2009,第14期

机译：使用扫描激光显微镜（SLM）和红外散射层析成像（IR-LST）对半绝缘6H-SiC单晶晶片中的缺陷进行无损三维观察
3. Photoluminescence assessment of undoped semi-insulating InP wafers Obtained by annealing in iron phosphide vapour [J] . H.W.Dong, Y.W.Zhao, H.P.Lu Semiconductor science and technology . 2002,第6期

机译：在磷化铁蒸气中退火获得的未掺杂半绝缘InP晶片的光致发光评估
4. Study of self-assembled InAs quantum dots on InP nano-templates by low voltage scanning electron microscopy cathodoluminescence [C] . Nadia Lahkak, Dominique Drouin, Jean Beerens, Microscopy Society of America annual meeting;Microscopy Society of Canada annual meeting;Societe de Microscopie du Canada annual meeting;Microbeam Analysis Society annual meeting;International Metallographic Society annual meeting . 2002

机译：低压扫描电子显微镜阴极发光研究InP纳米模板上自组装InAs量子点的研究
5. Textural features of igneous and metamorphic quartz as revealed by scanned cathodoluminescence (SEM-CL): Potential use in provenance studies. [D] . Tennison, Evelyn June. 2002

机译：扫描阴极发光（SEM-CL）揭示的火成岩和变质石英的质地特征：在物源研究中的潜在用途。
6. Serial Section Scanning Electron Microscopy (S3EM) on Silicon Wafers for Ultra-Structural Volume Imaging of Cells and Tissues [O] . Heinz Horstmann, Christoph Körber, Kurt Sätzler, 2009

机译：硅片上的连续切片扫描电子显微镜（S3EM），用于细胞和组织的超结构体积成像
7. Hyperspectral photoluminescence scans of mc- Si wafers analysed through Multivariate Curve Resolution (MCR) [O] . Fremme Astrid Kristine 2014

机译：通过多变量曲线分辨率（MCR）分析的mc-Si晶片的高光谱光致发光扫描

Characterization of Semi-Insulating InP Wafers by Scanning Luminescence (SPL), Scanning Photocurrent (SPC) and Cathodoluminescence (CL). Study of the Wafer Homogeneity

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