Junction Field-Effect Transistor Based on GaAs Core-Shell Nanowires

摘要

Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of 1_D = 260 nA and a transconductance of g_m-300 nS.