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Driving Voltage Reduction through Non-radiative Charge Recombination Interfaces in Organic Light-Emitting Diode

机译:通过有机发光二极管中的非辐射电荷重组界面驱动电压降低

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We report a new way for the driving voltage reduction through non-radiative charge recombination interfaces in organic lightemitting devices (OLEDs). Non-radiative charge recombination interfaces made between a hole transporting layer and a deep lowest unoccupied molecular orbital (LUMO) electron transporting layer results in significant increase of hole current conduction, which finally could give us voltage reduction in OLEDs. Such voltage reduction is attributed to strong columbic interaction at charge recombination interfaces. Voltage reduction from 5.2 to 4.3 V at 1000 cd/m2 in fluorescent blue devices is demonstrated with this our concept. Our suggested structure of non-radiative charge recombination interfaces can be very useful for many practical organic semiconductor device applications.
机译:我们报告了通过有机发光装置(OLED)中的非辐射电荷重组界面的驱动电压降低的新方法。在空穴传输层和深最低的未占用分子轨道(LumO)电子传输层之间制造的非辐射电荷重组界面导致孔电流传导的显着增加,这最终能够在OLED中提供给我们的电压降低。这种电压降低归因于电荷重组界面的强牙果白相互作用。通过这一概念对1000cd / m2的5.2至4.3V的电压降低为1000℃至4.3V。我们建议的非辐射电荷重组接口结构对于许多实际有机半导体器件应用非常有用。

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