The Impact of a High-K Gate Dielectric on a p-Channel Tunnel Field-Effect Transistor

摘要

In this paper, the impact of varying the dielectric constant of the gate dielectric on the device performance of a double gate p-channel tunnel field-effect transistor (p-TFET) is reported for the first time. It is observed that fringing field arising out of a high-K gate dielectric degrades the device performance of a p-TFET, which is in contrast with its n-channel counterpart, where the same been reported to yield better performance. Also, the impact of fringing field is found to be larger for a p-TFET with higher source doping.