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Role of Ru vacancies in the magnetism of strain relaxed SrRuO_3 films on SrTiO_3 substrates

机译:Ru职位空缺在SRTIO_3底板上的应变弛豫Srruo_3薄膜磁性中的作用

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Magnetic properties of Ru-deficient strain relaxed SrRuO_3 films have been investigated. The ferromagnetic transitions drop off from 138 to 100 K with expansion of unit cell volume due to the Ru vacancies. A secondary transition starts appearing near to the bulk transition temperature of 155 K, indicating the two different Ru-deficient regions which result in an exchange structure. Anomalous variation of the saturation magnetization with the unit cell volume could be originated from the stabilization of the high spin Ru~(+4) states due to the Ru-vacancy and the induced crystal lattice distortions from cla > 1 to cla < 1.
机译:研究了Ru缺陷菌株弛豫的磁性弛豫Srruo_3薄膜。由于RU空位,铁磁过渡从138降至100 k下降到100 k。二次转换开始出现在155 k的体积转变温度附近,表示两种不同的曲线区域,导致交换结构。通过单位电池体积的饱和磁化强度的异常变化可以源于高旋转Ru〜(+4)状态的稳定性,因为Ru空空间和来自CLA> 1至Cla <1的诱导的晶格畸变。

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