A fabrication process to characterize single crystalline silicon microbeams under uniaxial tension is presented. The microbeams subjected to an uniaxial tensile stress are released without stiction owing to a critical point drying step. Based on the deformation measured by scanning electron microscopy images, the corresponding strain and stress are extracted to provide the mechanical response of monocrystalline silicon. A complementary method based on the determination of the flexural resonance frequency of the released beams is discussed and compared to the results obtained with the first direct method.
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