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Investigations of the effects of blade type, dicing tape, blade preparation and process parameters on 55nm node low-k wafer

机译:叶片式,切割胶带,叶片制备和工艺参数对55nm节点低k晶片的影响的研究

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This paper presents an investigation of the effects of blade type, dicing tape, blade preparation and the key process parameters optimization on improving topside ILD peeling (thicker scribe structures) and chipping for 55nm low-k wafer. An appropriate dicing blade selection, blade preparation / conditioning methodology and dicing tape selection plays an important role in developing a robust saw process. As such, experimental studies were conducted under varying Z1 spindle rotation, Z1 cut depth into Si as well as the blade type property variation as the input factors, in order to improve the ILD peeling and die chipping. The settings of machining parameters and blade types were determined by using the design of experiment (DOE) techniques and the critical process parameters and materials were analyzed statistically by using the analysis of variance (ANOVA). Dicing tape property variations (PO-base or PVC-base) as well as the blade preparation methodology posed some influences on the overall dicing quality, such as die backside chipping, die removal performance, ILD peeling and die topside chipping. SEM imaging and optical visual inspection were conducted to validate the impacts of the ILD peeling / chipping on post-processed low-k wafers. A thorough quantification and categorization of ILD peeling and chipping on heavy metallization at the saw scribe structures were described. As part of the recommendation for future works, a different approach in dicing technology, namely laser grooving was proposed to eliminate ILD peeling and chipping. In conclusion, the optimized dicing recipe for 55nm node low-k wafer suggested by the DOE model are: (1) a thinner PO-base dicing tape, (2) a dicing blade with higher diamond concentration and finer grit size, (3) blade preparation / conditioning done with SiC board and (4) processing at lower spindle rotation and deeper cut depth are much preferred. The overall dicing responses and cutting quality has improved and is better compa- - red to current production recipe.
机译:本文介绍了叶片式,切割胶带,刀片制备的影响和关键工艺参数优化对改进顶部ILD剥离(厚轧制结构)的影响以及55nm低k晶片的碎片。适当的切割刀片选择,刀片制备/调理方法和切割胶带选择在开发强大的锯工艺方面发挥着重要作用。因此,在不同的Z1主轴旋转下进行实验研究,将深度切割成Si以及作为输入因子的叶片式性能变化,以改善ILD剥离和模切。通过使用实验(DOE)技术的设计确定加工参数和叶片类型的设置,并且通过使用方差分析(ANOVA)统计分析关键过程参数和材料。切割胶带性能变化(PO底座或PVC底座)以及刀片制备方法对整体切割质量产生一些影响,如模板后侧碎片,模具去除性能,剥离和模具顶部切削。进行SEM成像和光学视觉检查以验证ILD剥离/切削对后处理后的低k晶片的影响。描述了锯划线结构中重金属ILD剥离和碎裂的彻底量化和分类。作为未来作品推荐的一部分,提出了一种不同的方法,即激光凹槽,以消除ILD剥皮和切削。总之,DOE模型建议的55nm节点低k晶片的优化切割配方是:(1)较薄的PO-基部切割带,(2)具有较高金刚石浓度和更细粒尺寸的切割刀片,(3)用SiC板和(4)处理在较低主轴旋转和更深切割深度下进行的叶片制备/调节是多样的。整体切割响应和切割质量有所改善,更好地是目前的生产配方。

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