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Practical Implementation of Immersion Resist Materials

机译:浸没材料的实用实施

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Immersion lithography has gone through its first phase of introduction and acceptance as the main solution for criticallayer lithography for 45nm node and beyond. In this phase, the industry has found that immersion technology has itsown unique challenges associated with introducing water as a medium between the projection lens and wafer. Resistprocess qualification is once again under the spot light. Due to the rapid introduction of immersion technology resist suppliers did not have sufficient time toreformulate their standard ArF resist processes to be compatible with water while at the same time satisfying criticalimaging, etching and other requirements. For this reason a barrier (topcoat) had to be introduced in order to preventresist leaching as well as to produce a more desirable surface for water to glide over. Introducing a top-coat createdchallenges for all parties involved: scanner manufacturers resist vendors and the end users. Since each manufacturer hasits own unique technology for introducing immersion water, top-coat/resist processes needed not only to meet the endusers' performance criteria but also meet each scanner manufacturer's requirements. Therefore material screeningprocess and process evaluation became an important factor in immersion technology processes. Defectivity became theprimary criterion for the resist process.
机译:浸入式光刻已经通过其第一阶段的引入和验收作为批评者光刻的主要解决方案,为45nm节点和超越的批评光刻。在这一阶段,该行业发现,浸没技术具有与引入水作为投影透镜和晶片之间的介质相关的独特挑战。抵抗力资格再次在斑点灯下再一次。由于浸入技术的快速引进,抗蚀剂供应商没有足够的时间缩合其标准的ARF抗蚀剂方法与水兼容,同时令人满意的批准,蚀刻和其他要求。因此,必须引入屏障(面涂层)以防止浸出浸出以及生产更理想的水以用于滑过的水。为所有涉及的各方引入顶级型计算机创造:扫描仪制造商抵抗供应商和最终用户。由于每个制造商都拥有自己的独特技术,用于引入浸泡水,顶层/抗蚀剂工艺不仅需要满足终端用主义者的绩效标准,而且需要满足每个扫描仪制造商的要求。因此,材料筛查过程和过程评估成为浸没技术过程中的重要因素。缺陷成为抗蚀剂过程的主要标准。

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