Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

摘要

In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 ?°C) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.