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On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

机译：Al 2 O 3 / GaN金属氧化物半导体电容器中氧化物陷阱的俘获机理

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Bisi D.; Chan S.H.; Liu X.; Yeluri R.; Keller S.; Meneghini M.; Meneghesso G.; Zanoni E.; Mishra U.K.;
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年度 2016
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2. Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations [J] . Tapajna M., Jurkovic M., Valik L., Journal of Applied Physics . 2014,第10期

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On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

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